Peter Hulbert, Keithley Instruments Inc.
EETimes (11/20/2012 9:00 AM EST)
Editor’s note: this is part two of an ongoing series on testing memory.
In Part 1 of this article, I outlined the growing concern among manufacturers of consumer products that incorporate memory devices that floating-gate flash memory would one day soon no longer be able to satisfy their requirements and the search for alternative NVM technologies. I discussed one alternative to flash memory, phase-change memory (PCM), and explored emerging device characterization approaches. Part 2 addresses the testing challenges associated with another emerging NVM technology, ferroelectric memory (FRAM).
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