Hsinchu, Taiwan -- Feb. 10, 2014 -- eMemory, the global leader in embedded non-volatile memory (eNVM), today announced an technology advancement with Vanguard International Semiconductor Corporation (VIS) of 0.16um high-voltage process embedded flash NeoFlash silicon intellectual property (SIP). The specification has been enhanced from consumer electronics applications to industrial grade. This achievement enables significant improvements in data retention in rigorous industrial environment and provides support to customers with stringent demands in high-temperature operational environment. It is also an important process breakthrough of NeoFlash following the touch controller ICs and gauge ICs applications, which expands applicable range from consumer electronics to high-end industrial grades products such as industrial machines, manufacturing equipments and medical instruments. This solution has passed qualification and is available for mass production.
eMemory’s advanced development in 0.16um high-voltage process embedded flash NeoFlash SIP is able to strengthen device specifications to 125℃/10 years, with high speed read/write cycle time up to 40ns. These specifications are excellent for industrial grade products with superior demands in operational conditions and performance such as ARM Cortex-M0 microcontroller; hence assist customers to broaden product ranges from consumer electronics to industrial grade applications.
eMemory’s embedded flash NeoFlash SIP is compatible with logic process, and only require two additional masks to be integrated on high-voltage process. Compared with the other types of embedded flash which require at least seven to nine additional masks, eMemory’s solution can greatly reduce wafer production cost. For customers who require diversified and cost effective solutions, eMemory’s unique hybrid eNVM is also a great option which offers product differentiation and allows client to launch products with precise market position.
eMemory President Rick Shen commented, “The successful qualification of 0.16um NeoFlash with VIS is an important milestone for both parties. Through proactive developments of one-time and multiple-times programmable eNVM, we can not only meet the ever changing market demands with flexibility and provide the optimum eNVM solutions, but also help customers to expand their product applications and create market opportunities. In the future, eMemory will continue working closely with VIS to provide customers professional eNVM technology platforms.”
As embedded flash NeoFlash technology marching into industrial grade applications and entering mass production; eMemory and VIS are looking forward to continuing developing niche process platforms with superior performance and integration capability by synergizing their competitive advantages and outstanding technical and support services, ultimately creating strategic opportunities for customers.
eMemory (TWSE: 3529) is a global leader in logic process embedded non-volatile memory (eNVM) silicon IP. Since established in 2000, eMemory has been devoted to research and development of innovative technologies, offering the industry’s most comprehensive platforms of patented eNVM IP solutions include NeoBit (OTP silicon IP), NeoFuse (anti-fuse OTP silicon IP), NeoMTP (1,000+ times programmable silicon IP), NeoFlash (10,000+ times programmable silicon IP), and NeoEE (100,000+ times programmable silicon IP) to semiconductor foundries, integrated devices manufacturers (IDMs) and fabless design houses worldwide. eMemory’s eNVM silicon IPs support wide range of applications include trimming, function selection, code storage, parameter setting, encryption, and identification setting. The company has the world’s largest NVM engineering team and prides itself on providing partners a full-service solution that sees the integration of eMemory eNVM IP from initial design stages through fabrication. For more information about eMemory, please visit www.ememory.com.tw.