"The Memory product line represents the largest selection of silicon-proven, low risk, easy to integrate, embedded memory IP available today. Hundreds of memory compilers are available ranging from 250-nm to 65-nm and spanning many foundries to address the demanding requirements of density, speed and power. Three separate families of sub-megabit embedded memory compilers are architured under the Area, Speed, and Power (ASAP) Memory product line. The High-Density (HD) memories address the needs of many applications that are optimized for area; the High-Speed (HS) memories address the requirements of high-performance systems; and the Ultra-Low Power (ULP) memories address the needs of power-sensitive portable applications. The Ultra-Low-Power architecture involves using techniques such as self-timed clocking, clock-partitioning, reduced bit-line swing, and array banking to deliver the lowest possible power. Sophisticated power models based on SPICE provide detailed and accurate power models for system integration. End-of-cycle shut-off logic and the addition of a memory disable pin ensure zero quiescent current regardless of the state of the clock or input pins, thereby facilitating very low power consumption when the memory is idle. The advanced Ultra-Low-Power architecture has been in used for designs as long ago as 180-nm. The High-Density (HD) address the area sensitive needs required in today's competitive system-on-chip (SoC) design environment while leveraging design techniques to optimize area without compromising on quality and ensure accurate test chip validation. The High-Speed memory architecture leverages state-of-the-art circuit techniques and rigid design practices to ensure high-performance does not come as the price of quality. The advanced design techniques used ensure tight internal timing controls across all process corners, operating voltages and temperatures. Some of these advanced design techniques include high-speed sense amplifiers, fast clocking, and fast bit-line recovery, which contribute to achieving the high-speeds required by today's high-performance applications. The Memory System includes self-testable and repairable memories ranging in size from the smallest register files (RF) to the largest multi-megabit memories, or integrate with most third-party BIST engines."
- Ultra-Low-Power (ULP) memory architecture enable users to take advantage of memories with reduced active and leakage power required to support the needs of today's portable and battery operated products.
- All DesignWare ASAP Memories can optionally include the comprehensive Built-In-Self-Test (BIST) implementation found in Synopsys' DesignWare STAR Memory System.
- DesignWare STAR Memory provides embedded memories designed for testability and manufacturing to optimize yield.
- Building on the DesignWare ASAP Memory product line, DesignWare STAR Memories include redundancy capabilities for repair purposes
- The High-Density family consists of: 1 Port Register File, 2 Port Register File, Single Port SRAM, Dual Port SRAM, ROM.
- The ROM Compiler generates instances that may be programmed by a ROM programming tool.
- Synopsys' High-Speed (HS) memories are architected to meet high-performance requirements without compromising product quality.
- The High-Speed family consists of:
- Single Port SRAM,
- Dual Port SRAM,
- 1 Port Register File,
- Multiport Register File
- CDL and other industry standard design views