THE WINNING ALTERNATIVE TO IN-HOUSE DEVELOPMENT!
The celebrated BIV (Battery Interface Voltage) with its patented Flip-Flop, is now available at 65 nm in addition to 180 nm and 130 nm, for designing SoCs targeting low-power applications.
SESAME BiV, thanks to its design based on 3.3 V transistors, can be applied for two different and complementary purposes:
* Direct battery supply: Using the SESAME BIV for synthesizing small logic blocks directly connected to the battery supply with no need for an intermediate regulator.
* Low Leakage islet: SESAME BIV is the best alternative for synthesizing an always-on logic block, such as Real Time Clock - while maintaining the leakage to the lowest level compared to implementations based on HVt libraries.
- Direct battery supply
- Low Leakage features
- Consistent kit for a straightforward design-in
- Optimal Design for Yield