Mobile Semiconductor s Trailblaze(TM) software delivers silicon-proven SRAM compilers to generate low voltage (LV), ultra high speed (UHS), multi-megabit (MM) and high density (HD) memory architectures.
Mobile Semiconductor s low-voltage (LV) design techniques enable a wider range of operating voltages and a wider range of standby voltages for minimal power consumption. Mobile Semiconductor s low-voltage memory compilers use back biasing to reduce array leakage and ensure read and write operations with minimal power supply voltages. SRAMs are generated with the industry s leading experience in bit cell stability and statistical analysis for yield and leakage. High threshold voltage devices are used to minimize leakage currents, and limited standard threshold voltage devices are used when required. Low-voltage SRAMs operate at minimal power and have ultra-low power standby capabilities to extend useful battery lives of end products.