Advanced Micro Devices Licenses Embedded Memory From Innovative Silicon

SANTA CLARA, Calif.--Jan. 23, 2006--Innovative Silicon Inc. (ISi), the developer of Z-RAM(TM) (Zero Capacitor DRAM) high density memory IP, has announced that Advanced Micro Devices, Inc. has contracted to purchase a Z-RAM embedded memory technology license for potential use in its future microprocessor products.

Craig Sander, corporate vice president of technology development at Advanced Micro Devices, commented: "The dramatic increase in density offered by ISi's Z-RAM embedded memory can enable much larger on-chip microprocessor cache memories resulting in improved performance and reduced I/O power consumption."

ISi's president and CEO, Mark-Eric Jones, added: "We are very pleased to announce that AMD has contracted to purchase a technology license for our Z-RAM embedded memory technology. We are proud to have such a prominent and successful technology company with a strong reputation for innovation select Z-RAM memory, and underline the validity of the Z-RAM approach in comparison with other, less proven technologies. Working with AMD shows the increasing importance of using ultra-high density embedded memory in the semiconductor industry as embedded memory occupies larger and larger proportions of the microprocessor and embedded processor die area."

About AMD

Advanced Micro Devices is a leading global provider of innovative microprocessor solutions for computing, communications and consumer electronics markets. Founded in 1969, AMD is dedicated to delivering superior computing solutions based on customer needs that empower users worldwide. For more information visit www.amd.com.

About Innovative Silicon

Incorporated in 2002, Innovative Silicon was founded to develop and commercialize Floating Body effect memory for SoC/MPU products used in diverse applications including microprocessors, handheld computers, games consoles, cellular communications devices, and cameras. The company closed its first round of VC funding in 2003, completed its first 90nm megabit Z-RAM memory designs in 2004 and its first 65nm designs in 2005. The company is incorporated in the USA with R&D in Lausanne, Switzerland. For more information see http://www.z-ram.com.