Inapac Technology Releases New 16Mb DRAM Design for Mobile Applications That Reduces SiP/MCP Cost

Design Optimized to Reduce Stacked Die Memory Integration Cost to Less Than $0.50

SAN JOSE, CA --  April 26, 2007 -- Inapac Technology, Inc., the leading provider of DRAM solutions for system-in-package (SiP) and multi-chip-package (MCP) devices, today announced the release of a 16Mb (megabit) SDRAM design optimized for the mobile handset market. Based on Inapac's proven, high-volume SiPFLOW™ platform, the design incorporates a unique design-for-test (DFT) architecture and production methodology that enable SiP and MCP producers to minimize cost of ownership while achieving exceptional levels of production quality and reliability. Inapac estimates that the total cost of incorporating the new 16Mb memory die would be less than $0.50 per SiP/MCP in volume production. This cost-effective integration of 16Mb of memory into SiPs/MCPs further extends their reach in high-volume consumer markets, where their average selling price is $5.00 or less.

Inapac's SiPFLOW platform is licensed to SiP and MCP suppliers addressing such applications as feature-rich cellular handsets, personal media players and LCD-based displays.

"Our existing 16Mb SDRAM has enabled more than 50 million SiP devices with exceptional quality and reliability. The new design enables smaller packages, lower power and lower-cost implementations," said Naresh Baliga, vice president of marketing for Inapac. "The new design offers a bond-pad-compatible transition from the existing design, and is manufactured on the proven, high-volume 0.12-micron DRAM wafer foundry from ProMOS Technology."

The 16Mb 0.12-micron design will be available for sampling in Q2 2007, with volume production planned for Q1 2008.

SiP-Optimized Memory Design

The Inapac SiPFLOW platform delivers the lowest cost of ownership for stacked memory integration. It includes a family of memory designs, a proven production methodology, and specialized SiP memory testing services and support. The memory designs are optimized for SiP integration, including small footprint, low power consumption, and high-bandwidth operation via a wide bus interface. They feature edge bond pads for flexible stacking options and easier wire bonding between ASIC and memory dice.

The memory designs are based on a DFT architecture that includes the Inapac VIBE™ (Voltage-Induced Burn-in Emulation) technology and SiPLINK™ test circuits, which support economical wafer-level screening and final testing of memory within the assembled SiP device. Inapac's VIBE technology provides considerable cost savings relative to high-temperature dynamic wafer-level burn-in testing because it does not require specialized testing equipment. After assembly, the memory portion of the SiP can be thoroughly tested through the SiPLINK test gateway to ensure that quality and reliability targets are maintained.

Inapac's unique SiPFLOW methodology, combined with an IP-based business model, delivers cost efficiencies, quality and reliability beyond traditional KGD (Known-Good Die) approaches.

About Inapac

Inapac Technology, Inc. is a leading provider of memory technology and services for SiP (system-in-package) and MCP (multi-chip-package) solutions. Inapac provides IP and services based on a DFT (design-for-test) production methodology to deliver reliable, cost-effective memories. Products based on the company's proven SiPFLOW™ platform are licensed to semiconductor companies to enhance the performance, quality and reliability of products in the cell phone, consumer audio/video, digital imaging, and storage markets.

Inapac is headquartered in San Jose, California, with additional offices in Boise, Idaho, and Hsin-chu, Taiwan. For more information, visit the company's website at www.inapac.com.