On Nov 11, GlobalFoundries announced a new partnership with Taiwan Semiconductor Manufacturing Company (TSMC) on gallium nitride technology to power the next generation of products for data center, industrial and automotive power applications. We sat down with Téa Williams, the Senior Vice President of the Power Business at GF, to discuss this technology agreement, why GF is doubling down on GaN and what customers can expect next.
What is the technology agreement between GF and TSMC, and why does it matter?
GF has entered into a technology licensing agreement with TSMC for 650V and 80V GaN power technologies. In practical terms, this enables us to accelerate development and commercialization of nextâgeneration GaN products for both industrial applications, like data centers, as well as consumer applications like automotive and smart mobile.
For us, this partnership is a strategic step that blends TSMC’s proven process IP with GF’s GaN offerings and manufacturing scale. Not only will this agreement drive the development of our next-generation GaN chips to address power needs for mission critical applications, but it will also provide U.S.-based GaN capacity for our global customer base.
Why is GaN so important right now?
Traditional silicon CMOS is hitting performance limits for highâefficiency power conversion. GaN delivers higher efficiency, greater power density, and more compact systems. This is exactly what’s needed for hyperscale data centers, electric vehicles, renewable energy systems and fast charging electronics. GaN is empowering our customers to achieve more with less energy and less space.
What’s driving GF’s growing investment in GaN?
We’re doubling down on GaN for three key reasons. First, the market pull is undeniable. We’re seeing exploding demand for efficient power conversion — everywhere from electric vehicles to AI data centers to power grid modernization.
Second, GaN is simply the right technology for the job. Its performance hits the sweet spot for some of the toughest system requirements out there, including high voltage, high frequency, and thermal robustness.
Finally, we can bring something unique to the table. We combine differentiated GaN technology with a holistic approach to reliability, all the way from process development to device performance and application integration. That means we’re delivering solutions built to thrive in harsh environments and last for the long haul.
How will customers benefit from this agreement?
By giving customers access to proven GaN nodes, we’re accelerating both our own roadmap and our customers’ design cycles, so that they can get their products to the market faster.
As we offer advanced GaN manufacturing with U.S.-based capacity to serve global programs, we’re strengthening our domestic manufacturing capabilities. That means greater geographic diversity and stronger supply chain resilience for our customers.
Will customers in the U.S. be the only ones to benefit from this?
This will be beneficial to our customers from a global perspective. We are in discussion with many US and multinational customers that are eager to engage with us as we ready GaN for production.
Talking about ramping GaN, I want to also mention our Kolkata Power Center in India (ex-Tagore team), which has been a critical part of our GaN strategy. This center is closely aligned with GF’s facility in Burlington. I am excited to build on the complementary skillsets between these locations to further advance GF’s research, development and leadership in GaN chip manufacturing on a global scale.
Why will GaN technology be qualified and produced in Burlington, Vermont?
Burlington, Vermont is a center of innovation for GaN. Our site has deep expertise in highâvoltage GaNâonâSilicon and is equipped to scale volume production for customers who need nextâgeneration power devices with the highest standards of quality and reliability.
We’re excited to continue investing in these efforts, and have Burlington be the shining example of 200mm GaN Center of excellence.
How does this support U.S. semiconductor leadership, and is it driven by trade policy and tariffs?
This agreement is about accelerating time to market, and building a resilient, balanced manufacturing footprint here in the U.S. By qualifying advanced GaN technologies on U.S. soil, we’re strengthening the domestic supply of essential power semiconductors while serving global markets. Despite tariffs or trade policy continuing to evolve, this move is about supporting customers, boosting national competitiveness and growing the broader semiconductor ecosystem.
What’s coming up next for customers?
For any customers planning product launches in 2026–2027 for data centers, industrial or automotive segments, now’s the time to get involved. The Power team is collaborating closely with sales and manufacturing to plan an orderly ramp of top customers while building scale to serve the market as broadly as possible.
Any final thoughts, Téa?
There has never been a better time to be in Power Semiconductors! I am truly inspired about what we are building here at GF with GaN, BCD and integrated magnetics. Each of these process pillars by themselves can lead to outstanding opportunities, but when these strengths are put together, they unlock true differentiation in power product design.
We live in a world where energy consumption will only matter more every day: from smartphones to massive data centers. With our innovation and ingenuity in how to contribute to more sustainable and greener power solutions, GF is creating a better future now.