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In the last 2 posts in this series, I examined the lithography and transistor design issues that will need to be solved in order to save 2D scaling as we know it. In this post I will look at several other considerations.

For the moment, let’s assume that we are able to address the lithography and transistor design issues that I’ve identified in the previous posts. TSMC recently announced it will take delivery of an EUV lithography machine, so let’s assume they are successful in making the move to the 13.5 nm wavelength. IBM, TSMC, and Intel are already using multi-gate FETs in their most advanced process development and ITRS predicts it will be standard for the 32nm node, so let’s assume that will work out as well. If so, are we home free?

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