The first-ever Global Technology Conference (GTC), held by GLOBALFOUNDRIES Sept. 1 in Silicon Valley, made it clear that the company is aggressively going after the advanced-node foundry business and is moving ahead quickly on 28nm and below. GLOBALFOUNDRIES claims three distinctive capabilities in its move to 28nm:
- A "gate first" high-k metal gate (HKMG) technology promising power, performance, and area advantages.
- A new design for manufacturability (DFM) technology called DRC+, developed in cooperation with Cadence and Mentor Graphics.
- An analog/mixed-signal design flow development kit, delivered in partnership with Cadence.
GLOBALFOUNDRIES has been moving quickly since its founding in 2009. Its global reach encompasses the former AMD fab in Dresden, Germany; the former Chartered Semiconductor fabs in Singapore; and a new fab under construction in upstate New York. That fab will be aimed at 28nm and below and will install extreme ultraviolet (EUV) equipment, with an expected EUV production date of 2014-2015.
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