The last decade heralded a dramatic transformation in supply chain dynamics, driven by the complexity challenge of staying on the More Moore curve. On the demand side, the high cost of fabs persuaded almost all integrated device manufacturers (IDMs) to use foundries for their leading-edge wafer supply.
The ever-increasing process complexity and its negative impact on manufacturing yields forced the adoption of sophisticated foundry-specific design-for manufacturing (DFM) techniques, effectively committing new chip designs to a single foundry and process.
At the same time, the industry adopted a much more cautious lagging rather than leading demand approach to new capacity expansion, resulting in under-supply and shortages in leading-edge wafer fab capacity. To make matters worse, the traditional oxide-based planar transistor started to misbehave at the 130nm node, as manifested by low yields and higher than anticipated power dissipation, especially when the transistors were supposed to be off, with no increase in performance, heralding the introduction of new process techniques (e.g., high-k metal gates).
Even before these structural changes have been fully digested, supply chain dynamics have been further disrupted by the prospective transition to 450mm wafer processing, to extreme ultra violet (EUV) lithography, and from planar to vertical transistor design.
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