Non-volatile resistive random access memory (RRAM), widely considered by analysts and other leading experts to be the most viable alternative to NAND, offers clear advantages in cost, manufacturability, and gains in overall system performance. There is no question that current NAND technology has hit its scaling limits at the 1Y node. While 3D-NAND is considered to be the next alternative to NAND by enabling continuous cost reduction and scaling, the technology suffers from cell performance issues and poor on/off ratios, resulting in increased system complexity.
In order for a technology to succeed in a 3D architecture, it must deliver a significant increase in density, with a lower cost per bit compared to current Flash solutions, and it must accomplish this with a cell that performs better than existing cells. If these two requirements are not met, a 3D memory will fail to meet the capacity, density, and cost expectations of customers designing next-generation products.
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