Resistive RAM's low power consumption and small cell area make it a no-brainer for non-volatile memory.
The end of lithographic scaling of DRAM and NAND somewhere between 16nm and sub-10nm has been a popular call for the last few years, with many touting the emergence of new memory types including phase change RAM (PCRAM), ferro-electric RAM (FRAM), magneto-resistive RAM (MRAM), and more recently, resistance RAM as replacements (ReRAM and CBRAM).
Over the years TechInsights has analyzed PCRAM from Numonyx and Samsung, FRAM from Ramtron and MRAM from Freescale and its spin-off Everspin. These devices have found niche applications, but are not seen as replacements for NAND or DRAM due to scaling or power consumption constraints. Resistive RAM, on the other hand, features low power consumption and a small cell area; both compelling reasons for their adoption as a non-volatile memory.
Click here to read more ...