In 2005, Samsung launched its Foundry business to provide leading-edge technology to the broader market. Based on accumulated technology leadership, Samsung successfully developed the foundry industry’s first 32nm High-k Metal Gate (HKMG) process in 2010, and started the first 14nm Fin Field Effect Transistor (FinFET) product’s mass production
The third annual Samsung Foundry Forum (SFF) in the United States is set to take place on May 22nd, 2018 at the Santa Clara Marriott, where industry leaders will share their latest innovations in process technology, IP, design tools, design services, and packing for established and emerging applications.
Rambus is participating in SFF as a Samsung Advanced Foundry Ecosystem (SAFE™) partner. “Samsung Foundry is our strategic partner on an IP development front, specifically for High-Speed SerDes in 14nm and 10 nm.” says Mohit Gupta, Senior Director of Product Marketing at Rambus’ Memory and Interfaces Division. “We play an important role as part of their IP ecosystem and at SFF this year, we are focused on our 28G and 56G SerDes IP offerings.”
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