Design & Reuse
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2743 IP
2601
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 130 nm BCD - Non volatile memory optimized for low power - compiler range up to 256 k...
2602
0.0
Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 130 nm G - Non volatile memory optimized for low power - Dual Voltage - compiler range up to 1024 k...
2603
0.0
Metal programmable ROM compiler - Non volitile memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k...
2604
0.0
IGALVDT11A, TSMC CLN28HPC+/HPC/HPM LVDS RX PHY [8ch]
The IGALVDT11A is a TSMC CLN28HPC+/HPC/HPM 8-channel LVDS receiver PHY, which is used mainly in baseband IC and RFIC communication. An internal deskew...
2605
0.0
IGALVDT13A, TSMC 28nm HPC+ LVDS TX+RX I/O
IGALVDT13A, TSMC 28nm HPC+ LVDS TX+RX I/O...
2606
0.0
IGALVDT14A, TSMC CLN28HPC+ LVDS RX and CMOS Combo I/O
IGALVDT14A contains a receiver (RX) for LVDS interface and bi-derectional double CMOS. It supports the data rate up to 500Mbps. There is one macro ins...
2607
0.0
RGMII IO Pad Set
The (R)GMII library provides the combo driver / receiver and required support cells for (R)GMII signaling. The libraries are compliant with the Gigabi...
2608
0.0
Bi-Directional LVDS with LVCMOS
BiDirectional LVDS IO circuit combines LVDS driver and receiver circuits to enable a single pair of IO pads to function as a 1.5Gbps bi-directional LV...
2609
0.0
Library of LVDS IOs cells for TSMC 40G
The nSIO2000_TS40G_2V5_0V9 library is an IO cells library combining various LVDS and general purpose I/O powered at 2.5V/0.9V or 1.8V/0.9V, designed o...
2610
0.0
Library of LVDS IOs cells for TSMC 65GP
The nSIO2000_TS65GP_2V5_1V0 library is an IO cells library combining various LVDS and general purpose I/O powered at 2.5V/1.0V or 1.8V/1.0V, designed ...
2611
0.0
Library of LVDS Ios cells in HHGrace 130nm~55nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
2612
0.0
Library of LVDS Ios cells in HLMC 28nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
2613
0.0
Library of LVDS Ios cells in SMIC 130nm~28nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
2614
0.0
Library of LVDS Ios cells in TSMC 180nm~22nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
2615
0.0
Wide-range LVDS Video Interface
Flexible video deserializer capable of receiving 18bit, 24bit, and 30bit video data with embedded sync and control carried over four or five serial LV...
2616
0.0
Eight Channel (8CH) LVDS Serializer in Samsung 28FDSOI
The 28FDSOI-LVDS-1250-8CH-TX-PLL is a high performance 8-channel LVDS Serializer implemented using digital CMOS technology. Both the serial and parall...
2617
0.0
Single port SRAM Compiler - low power retention mode and column repair
Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...
2618
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k...
2619
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k
Single Port SRAM compiler - TSMC 55 nm LP - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k...
2620
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 uLPeFlash - Memory optimized for high density and low power - Dual Voltage - compiler range up...
2621
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k
Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...
2622
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - Compiler range up to 640 k
Single Port SRAM compiler - TSMC 90 nm LP - Memory optimized for high density and low power - Dual Voltage - Compiler range up to 640 k...
2623
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler range up to 320 k
Single Port SRAM compiler - TSMC 65 nm LP - Memory optimized for ultra high density and high speed - compiler range up to 320 k...
2624
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler up to 64 k
Foundry Sponsored - Single Port SRAM 2048X32 instance - TSMC 130 nm BCD Plus - Memory optimized for ultra high density and high speed...
2625
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 ...
2626
0.0
Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler rang...
2627
0.0
Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...
2628
0.0
Single Port, High Speed, Multi Bank SRAM Memory Compiler
Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...
2629
0.0
MIPI D-PHY/LVDS Combo DSI RX (Receiver) in TSMC 110G
The MXL-DPHY-LVDS-DSI-RX-T-110G is a high-frequency, low-power, low-cost, source-synchronous, Physical Layer compliant with the MIPI Alliance Standard...
2630
0.0
1Kbyte EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(...
2631
0.0
2KByte EEPROM in SMIC 130EF
...
2632
0.0
1KByte EEPROM IP with configuration 66p16w8bit
130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per pa...
2633
0.0
1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...
2634
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...
2635
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, VI- 110nm E-Flash 1.5V/3.3V Process
The ATO008KX16VI110EFM5DA I-fuse® IP is organized as 8Kx16 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 1...
2636
0.0
1Kx32 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The AT1K32T40ULP6AA is organized as a 1K-bit by 32 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40ULP 1.1/2.5...
2637
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in MXI- 0.1...
2638
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DC is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
2639
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DO is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
2640
0.0
4kx8 Bits OTP (One-Time Programmable) IP, Ne-chi- LCDDr 55nm 1.2V/6V Process
The ATO0004KX8NX055LCD4NA is organized as 4K x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Nexchip LCDDr 55nm ...
2641
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, TSM- 0.18µm 1.8V/5V Mixed-Signal Process
The ATO0004KX8TS180MSS3NA is organized as a 4Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in TSM- 0.18...
2642
0.0
1Kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0001KX8TS040ULP5ZA is organized as 1 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
2643
0.0
2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
2644
0.0
2kx8 Bits OTP (One-Time Programmable) IP, VI- 0.18µm standard CMOS mixed-signal process
The AT2K8V180MM0AA is organized as a 2Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in VIS 0.18µm stand...
2645
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V BCD Process
The AT4K8V150BCD0AA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15um BCD process. ...
2646
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD G...
2647
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GII...
2648
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The AT4K8V150BCD0AB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GIII proc...
2649
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/6V SOI BCD EPI Process
The ATO0004KX8VI150SOI3XX00A is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm SO...
2650
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XH180TG34DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in X-FA- 0....