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4603 IP
3751
0.0
Sigmoid activation function
This fast and low-power sigmoid function is a great improvement over simple activation functions...
3752
0.0
Signle Port High-Current SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
Signle Port High-Current SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
3753
0.0
Signle Port High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
Signle Port High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
3754
0.0
Signle Port Multi-Bank High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
Signle Port Multi-Bank High-Density SRAM Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT...
3755
0.0
SiLU-SwiGLU Activation Function
This fast and low-power SiLU function is a great improvement over simple activation functions, can be used alone or together with a multiplier to crea...
3756
0.0
Sine
Fast and low-power sine function...
3757
0.0
Sine - Cosine
Fast and low-power selectable sine or cosine function...
3758
0.0
Single port SRAM Compiler - low power retention mode and column repair
Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...
3759
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k...
3760
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k
Single Port SRAM compiler - TSMC 55 nm LP - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k...
3761
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 uLPeFlash - Memory optimized for high density and low power - Dual Voltage - compiler range up...
3762
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k
Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...
3763
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler range up to 320 k
Single Port SRAM compiler - TSMC 65 nm LP - Memory optimized for ultra high density and high speed - compiler range up to 320 k...
3764
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 ...
3765
0.0
Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler rang...
3766
0.0
Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...
3767
0.0
Single Port, High Speed, Multi Bank SRAM Memory Compiler
Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...
3768
0.0
Single- and double-precision IEEE-754 floating-point unit
The GRFPU is an IEEE-754 compliant floating-point unit, supporting both single and double precision operands. The pipelined design combines high throu...
3769
0.0
MIPI D-PHY CSI-2 TX/LVDS TX Combo (Transmitter) in TowerJazz 65BSB
The MXL-LVDS-0p6G-DPHY-1p2G-CSI-2-TX-TW-065BSB is a high-frequency, low-power, low-cost, source-synchronous, physical Layer supporting the MIPI Allian...
3770
0.0
MIPI D-PHY/LVDS Combo DSI RX (Receiver) in TSMC 110G
The MXL-DPHY-LVDS-DSI-RX-T-110G is a high-frequency, low-power, low-cost, source-synchronous, Physical Layer compliant with the MIPI Alliance Standard...
3771
0.0
MIPI PLL
The MXL-PLL-MIPI-PXL is a high performance PLL based frequency synthesizer implemented using digital CMOS technology. It is highly integrated and requ...
3772
0.0
Mish Activation Function
This fast and low-power mish function is a great improvement over simple activation functions...
3773
0.0
Jitter Cleaner PLL Digital Loop Filter
The Silicon Creation "DPLL" is a digital loop filter/controller designed to be used in conjunction with Silicon Creations Fractional-N PLLs. The resul...
3774
0.0
Divider
Divider for AI...
3775
0.0
1Kbyte EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(...
3776
0.0
2KByte EEPROM in SMIC 130EF
...
3777
0.0
1Kbyte EEPROM IP with configuration 64p8w16bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64...
3778
0.0
1KByte EEPROM IP with configuration 66p16w8bit
130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per pa...
3779
0.0
1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...
3780
0.0
1Kbyte Embedded EEPROM with configuration 64p8w16bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64...
3781
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...
3782
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, VI- 110nm E-Flash 1.5V/3.3V Process
The ATO008KX16VI110EFM5DA I-fuse® IP is organized as 8Kx16 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 1...
3783
0.0
1Kx32 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The AT1K32T40ULP6AA is organized as a 1K-bit by 32 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40ULP 1.1/2.5...
3784
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in MXI- 0.1...
3785
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DC is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
3786
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DO is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
3787
0.0
4kx8 Bits OTP (One-Time Programmable) IP, Ne-chi- LCDDr 55nm 1.2V/6V Process
The ATO0004KX8NX055LCD4NA is organized as 4K x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Nexchip LCDDr 55nm ...
3788
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, TSM- 0.18µm 1.8V/5V Mixed-Signal Process
The ATO0004KX8TS180MSS3NA is organized as a 4Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in TSM- 0.18...
3789
0.0
1Kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0001KX8TS040ULP5ZA is organized as 1 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
3790
0.0
2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
3791
0.0
2kx8 Bits OTP (One-Time Programmable) IP, VI- 0.18µm standard CMOS mixed-signal process
The AT2K8V180MM0AA is organized as a 2Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in VIS 0.18µm stand...
3792
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V BCD Process
The AT4K8V150BCD0AA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15um BCD process. ...
3793
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD G...
3794
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GII...
3795
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The AT4K8V150BCD0AB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GIII proc...
3796
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/6V SOI BCD EPI Process
The ATO0004KX8VI150SOI3XX00A is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm SO...
3797
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XH180TG34DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in X-FA- 0....
3798
0.0
8kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XF180HMH4DA is organized as a 8k-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in X-FA- 0.18μm ...
3799
0.0
4Kx9 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 12LP+ 0.8V/1.8V Process
The ATO0004KX9GF012LPP8ZA is organized as 4K-bits by 9 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Globa-Foundr--...
3800
0.0
CLK PLL
Integr N Clock PLL...
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