2001 0.0

64x8 Bits OTP (One-Time Programmable) IP, Ne-chi- 0.15μm 3.3V Logic Processes The ATO00064X8NX150FPS3NA is organized as a 64x8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ne-chi- 0.15μm 3.3V ...

2002 0.0

16x8 Bits OTP (One-Time Programmable) IP, VI- 150nm 1.8V BCD Process The ATO00016X8VI150BG22NA is organized as 16 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile m...

2003 0.0

32x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic Process The ATO00032X1MX180LB52NC is organized as a 32-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μm l...

2004 0.0

256x1 Bits OTP (One-Time Programmable) IP, VI- 110 nm 1.2V/5.0V BCD Process The AT256X1V110BCD0AA is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...

2005 0.0

512x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V CMOS 18B Process The ATO00512X1MX180LB52ND is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μ...

2006 0.0

32x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic Process The ATO00032X1MX180LB52ND is organized as a 32-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μm l...

2007 0.0

128x16 Bits OTP (One-Time Programmable) IP, D-Hite- 0.13μm BCD Process Platforms The ATO0128X16DB130BSA3NA is organized as a 128x16 one-time programmable (OTP). This is a type of non-volatile memory fabricated in D-Hite- BD130LVA (...

2008 0.0

8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...

2009 2.0

10 track thick oxide standard cell library at TSMC 55 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V) TSMC 55 LPeF, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through th...

2010 0.0

64x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm SiGe BiCMOS 1.8V/3.3V General Purpose Process The ATO00064X1TS180SGE3NA is organized as a 64-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 0.18μm S...

2011 0.0

64x8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm pure 3.3V MS process The ATO00064X8CA180M333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in CanSemi 0.18...

2012 0.0

512x1 Bits OTP (One-Time Programmable) IP, VI- 0.18μm standard CMOS mixed-signal Process The AT512X1V180MM0AA I-fuse® IP is organized as 512 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VIS 180nm CM...

2013 0.0

2kx8 Bits OTP (One-Time Programmable) IP, VI- 0.18µm standard CMOS mixed-signal process The AT2K8V180MM0AA is organized as a 2Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in VIS 0.18µm stand...

2014 0.0

256X8 Bits OTP (One-Time Programmable) IP, SMI- 0.153μm MSGL-GE-1.8-3.3 Process The ATO00256X1SM153MSG2NA is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SMIC 0.153u...

2015 0.0

64x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm MSGL-GE-1.8-3.3 & MSGL-LC-3.3-3.3 The ATO00064X8SM180N333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in SMIC 0.18μm ...

2016 0.0

128x1 Bits OTP (One-Time Programmable) IP, UM- 0.153μm Logic and Mixed-Mode 1.8V/3.3V process The ATO00128X1UM153LMM3NA is organized as a 128-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.153um CMO...

2017 0.0

128x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm 1.8V/3.3V Mixed-Signal process The ATO00128X1TS180MSG3OA is organized as a 128-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18um CMOS...

2018 0.0

256x1 Bits OTP (One-Time Programmable) IP, Abli- 130 nm 130nm BCD with 5V CMOS Core Process The ATO00256X1AB130MXX3XX00A is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.13µm s...

2019 0.0

64x8 Bits OTP (One-Time Programmable) IP, TSM- 130nm BCD Plus Process The ATO00064X8TS130BP53NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.13μm ...

2020 0.0

16x16 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm BCDM 1.8V/5V process The ATO0016X16SM180BS33NA is organized as 16 bits by 16 one-time programmable (OTP) in 16-bit read and 1-bit program modes. This is a kind of non-vola...

2021 0.0

128x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18µm 1.8V/3.3V Mixed Signal Process The AT128X8Z180MH0AA is organized as a 128-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm standard ...

2022 0.0

16x8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18um XH018 1.8V/3.3V process The ATO00016X8XH18018P4DA is organized as a 16-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm XH018...

2023 0.0

512x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic Process The ATO00512X1MX180LA52NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXIC 0.18μm...

2024 0.0

512x1 Bits OTP (One-Time Programmable) IP, HHGrac- 95nm 1.5V/5V Embedded SONOS Flash (EF095LP) The ATO00512X1HH095SON3NA is organized as a 512-bits by 1 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in ...

2025 0.0

512x1 Bits OTP (One-Time Programmable) IP, TSM- 152nm 1.8V/3.3V Mixed Signal The ATO00512X1TS152GMS3NA is organized as a 512-bits by 1 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in...

2026 0.0

512x1 Bits OTP (One-Time Programmable) IP, VI- 110nm 1.5V/3.3V The AT512X1V110MM0AA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VIS 110nm CMOS l...

2027 0.0

768x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE The AT768X1U110MAE0AA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memor...

2028 0.0

64x1 Bits OTP (One-Time Programmable) IP, TSM- 0.16um 1.8V/3.3V Process The ATO00064X1TS160MSG3NA is organized as a 64-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18um CMOS ...

2029 0.0

32x1 Bits OTP (One-Time Programmable) IP, UM- 0.162μm 1.8V/3.3V Process The AT32X1U162GN0AA is organized as a 32-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.162um standard C...

2030 0.0

768x3 Bits OTP (One-Time Programmable) IP, UM- 142 nm 1.8V/3.3V CIS The AT768X3U142CIS0AA is organized as 768-bits by 3 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in 0.142...

2031 0.0

512x1 Bits OTP (One-Time Programmable) IP, NJR- 0.05μm UD50SP Process The AT512X1UD50SP0AA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in UD50SP process. ...

2032 0.0

8kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process The ATO0008KX8XF180HMH4DA is organized as a 8k-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in X-FA- 0.18μm ...

2033 5.0556

HDMI, LVDS, RF and Analog Pads Library in 45nm / 40nm in TSMC 45/40nm A 1.0V to 5V Analog IO Library that includes an HDMI, LVDS, and Analog/RF Low Capacitance pad set in 45nm/40nm HPM processes. This library is a col...

2034 5.0556

RP65: Multi-Voltage GPIO with PWM, I2C/SVID open-drain, 3.3V/5V analog & OTP, TSMC 65nm A silicon-proven, wirebond I/O library in TSMC 65nm with dual independent I/O supply rails (1.0–3.3V and 3.3V) and power-on control (POC) to hold I/Os...

2035 5.0556

AV55: Low-Capacitance RF ESD Cell Library, TSMC 55nm LP A production-quality, silicon-proven ESD library in TSMC 55nm LP — not a full I/O, but a collection of standalone, low-capacitance ESD cells for RF an...

2036 4.0556

MS55: Multi-voltage analog I/O Library with custom 12V ESD, GlobalFoundries 55nm BCD Lite A silicon-proven, flip-chip-optimized analog and mixed-signal I/O library in GlobalFoundries 55nm BCD Lite, providing 1.8V, 3.3V, 5V, and 12V analog I...

2037 4.0556

TA18: 1.5V - 3.3V GPIO Library with tri-state driver & 7V OTP, GlobalFoundries 180nm BCD Lite A silicon-proven wirebond GPIO library in GlobalFoundries 180nm BCD Lite — a specialty I/O in the SoundWire family — with a 1.5V–3.3V multi-voltage GP...

2038 5.0556

A TSMC 16nm 2Gbps LVDS/SLVS Combo Transceiver This combo transceiver is a highly configurable 2Gbps transceiver for LVDS or SLVS interfaces. With features like dynamic interface selection, on-die ...

2039 4.0556

A radiation-hardened GlobalFoundries 12nm LP/LP+ 0.8V LVDS Transceiver Certus Semiconductor’s 2.5Gbps LVDS transceiver in GlobalFoundries LP/LP+ is designed for high-speed, low-power data transmission in radiation-intensi...

2040 5.0556

WD28 / SC28: sub 80fF ESD Macro for multi-gigabit SerDes, TSMC 28nm A silicon-proven, ultra-low-capacitance ESD macro in TSMC 28nm for multi-gigabit SerDes, available in wirebond (WD28) and flip-chip (SC28) variants. I...

2041 5.0556

IS55: Specialized 20V Analog ESD Cell, TSMC 55nm LP A silicon-proven 20V ESD protection cell in TSMC 55nm LP, built for high-voltage interfaces in analog, mixed-signal, RF, and power-management ICs. Its...

2042 5.0556

TF55: 0.9V/1.2V SoundWire audio I/O Library with auto-delay calibration, TSMC 55nm LP A silicon-proven 0.9V/1.2V SoundWire I/O library in TSMC 55nm LP — the next-generation, lower-voltage companion to the 0.9V/2.5V TE55, with added auto...

2043 5.0556

TE55: 0.9V/2.5V SoundWire audio I/O Library, TSMC 55nm LP A silicon-proven 0.9V/2.5V in-line I/O library in TSMC 55nm LP, purpose-built as a SoundWire interface for high-performance, low-power audio. It provi...

2044 5.0556

RS18: 1.8V GPIO with 1.8V/3.3V analog I/O, TSMC 180nm BCD Certus' silicon-proven I/O library in TSMC 180nm BCD, built for mixed-signal, power-management, and BCD applications. It combines a 1.8V digital I/O (...

2045 5.0556

SN12: 5V Generic I/O & ESD protection Library (>8kV HBM / 8A), TSMC 12nm A base set of ESD protection structures for I/O and power supplies in TSMC 12nm FFC/FFC+, targeting up to 8A (>8kV HBM). The cells trigger and protect...

2046 5.0556

A 2Gbps SLVS Transceiver in TSMC 28nm This 1.8V SLVS transceiver is a high-performance, low-power I/O solution optimized for TSMCs 28nm process. Designed with 1.8V thick oxide devices and ...

2047 5.0556

A 2Gbps LVDS Tranceiver in TSMC 28nm This 1.8V LVDS transceiver, designed for TSMCs 28nm process, delivers high-speed, low-power differential signaling with superior signal integrity. Eng...

2048 0.0

OTP One Time Programmable IP Silterra 160HV Chuangfeixin (CFX)'s OTP IP is adopted in different generations of logic and HV technology (0.18/0.16/0.13/0.11 um and 90/65/55/40/28 nm). The require...

2049 0.0

OTP One Time Programmable IP HHGrace 55LP Chuangfeixin (CFX)'s OTP IP is adopted in different generations of logic and HV technology (0.18/0.16/0.13/0.11 um and 90/65/55/40/28 nm). The require...

2050 0.0

OTP One Time Programmable IP HHGrace 55HV Chuangfeixin (CFX)'s OTP IP is adopted in different generations of logic and HV technology (0.18/0.16/0.13/0.11 um and 90/65/55/40/28 nm). The require...