2601 1.0

HHGrace 0.11um ULL 7track ECO Library HHGrace 0.11um Ultra Low Leakage 7track ECO Library...

2602 1.0

SMIC 0.13um 6 track High Density Standard Cell Library - HVT,1.2v operating voltage SMIC 0.13um 6T HVT High-Density Standard Cell Library...

2603 1.0

SMIC 0.13um Power Management Kit,1.2v operating voltage SMIC 0.13um Power Management Kit Library...

2604 1.0

SMIC 0.13um 1.2V<->3.3V level shifter,1.2v/3.3v operating voltage SMIC 0.13um 1.2V3.3V Level Shfiter Library...

2605 1.0

SMIC 0.13um Low Leakage 6 track High Density Multi-Bits Flip-Flop ...

2606 1.0

TSMC 12nm FFC 6track Delay Cells TSMC 12nm FFC 6 track High Density Delay Cells...

2607 1.0

SEC 5nm LVH 6T Multi-Bits Latch SEC 5nm LVH 6 track High Density Multi-Bits Latch...

2608 1.0

Silterra 0.11um Ultra Low Leakage 6track Std Cell Library Silterra 0.11um Ultra Low Leakage 6track Std Cell Library...

2609 1.0

Silterra 0.11um Ultra Low Leakage 6track PMK Library ...

2610 0.0

memBrain™ Tile ...

2611 50.0

Ultra High-Speed Cache Memory Compiler Silvaco’s Ultra High-Speed cache memory is an adaptable, independent, non-coherent cache Intellectual Property (IP) featuring an advanced cache ar...

2612 0.0

Standard Cell Library Low Voltage Operation 0.45 V Silvaco’s low voltage Standard Cell Library for the TSMC N3P process represents a breakthrough in power efficiency for high performance SoC designs. A...

2613 6.0

10-bit dual-port 30MHz ~ 85MHz LVDS Tx; ...

2614 20.0

NVM MTP in GF (180nm, 55nm) Synopsys Non-Volatile Memory (NVM) IP provides reprogrammable NVM supporting up to 1 million bits (1Mbit) configurations in standard CMOS and BCD proc...

2615 20.0

NVM MTP in Samsung (130nm) Synopsys Non-Volatile Memory (NVM) IP provides reprogrammable NVM supporting up to 1 million bits (1Mbit) configurations in standard CMOS and BCD proc...

2616 20.0

NVM OTP in GF (180nm, 130nm, 65nm, 55nm, 40nm, 28nm, 22nm, 12nm) Synopsys Non-Volatile Memory (NVM) IP provides reprogrammable NVM supporting up to 1 million bits (1Mbit) configurations in standard CMOS and BCD proc...

2617 20.0

NVM OTP in Tower (180nm) Synopsys Non-Volatile Memory (NVM) IP provides reprogrammable NVM supporting up to 1 million bits (1Mbit) configurations in standard CMOS and BCD proc...

2618 20.0

NVM OTP in Huali (40nm, 28nm) Synopsys Non-Volatile Memory (NVM) IP provides reprogrammable NVM supporting up to 1 million bits (1Mbit) configurations in standard CMOS and BCD proc...

2619 0.0

Synthesizable 3DIO IP for Flexible Physical Implementation Synopsys 3DIO is a specialized IO for multi-die integration. It includes multiple IP offerings for system-on-chip (SoC) designers to implement tunable...

2620 0.0

TSMC N5 Source Sync 3DIO Library Synopsys 3DIO is a specialized IO for multi-die integration. It includes multiple IP offerings for system-on-chip (SoC) designers to implement tunable...

2621 0.0

TSMC N3P 3DIO Library Synopsys 3DIO is a specialized IO for multi-die integration. It includes multiple IP offerings for system-on-chip (SoC) designers to implement tunable...

2622 0.0

TSMC N3P Source Sync 3DIO Library Synopsys 3DIO is a specialized IO for multi-die integration. It includes multiple IP offerings for system-on-chip (SoC) designers to implement tunable...

2623 0.0

TSMC N3P Source Sync 3DIO PHY Synopsys 3DIO is a specialized IO for multi-die integration. It includes multiple IP offerings for system-on-chip (SoC) designers to implement tunable...

2624 0.0

8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process The ATO0008KX8MX180LBX4DC is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....

2625 0.0

8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process The ATO0008KX8MX180LBX4DO is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....

2626 0.0

512X1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm SiGe BiCMOS 1.8V/3.3V Process The ATO00512X1TS180SGE3NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.18μm...

2627 0.0

4kx8 Bits OTP (One-Time Programmable) IP, Ne-chi- LCDDr 55nm 1.2V/6V Process The ATO0004KX8NX055LCD4NA is organized as 4K x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Nexchip LCDDr 55nm ...

2628 0.0

512x1 Bits OTP (One-Time Programmable) IP, S-_h-nix HC130SFN 1.8V/2.8V Process The ATO00512X1HY180CIS3NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SK_hynix HC...

2629 0.0

Register File with low power retention mode and 3 speed options Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm...

2630 0.0

Register File with low power retention mode and 3 speed options Low Leakage. Mobile Semiconductor's SP-ULD-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm F...

2631 40.0

Register File with low power retention mode and 3 speed options Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm FDX ...

2632 30.0

Ultra Low Voltage (ULV) SRAM Mobile Semi delivers optimized, embedded SRAM solutions that are designed for the lowest operating voltages and lowest standby currents available in t...

2633 30.0

Single port SRAM Compiler - low power retention mode Silicon proven, qualified and in high volume production. Single Port compiler offers the lowest retention power on the market....

2634 0.0

Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...

2635 0.0

Single port SRAM Compiler - low power retention mode and column repair Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...

2636 0.0

Register File with low power retention mode, high speed pins on 1 side Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates single-port Register File instances using the Bulk 22ULL proce...

2637 0.0

Two port register file (1R1W) with low power retention mode Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates dual port Register File instances using the Bulk 22ULL proces...

2638 0.0

Single Port SRAM with low power retention mode, high speed pins on 1 side Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...

2639 0.0

Bulk 40ULP single port SRAM Compiler - ultra low power, low power retention mode Silicon proven, qualified and in high volume production. Single Port compiler offers the lowest retention power on the market....

2640 0.0

Bulk 40ULP Single Port SRAM with low power retention mode, high speed pins on 1 side Low Leakage. Mobile Semiconductor's Bulk 40 ULP BULKSRAM memory compiler generates memory instances using the premier low power 40nm process.. Each ul...

2641 40.0

Single port SRAM Compiler - low power retention mode Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...

2642 0.0

2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...

2643 0.0

Single Port, High Speed, Multi Bank SRAM Memory Compiler Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...

2644 0.0

Dual Port Register File Compiler (1 Read-Only Port, 1 Write-Only Port) Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates Dual Port Register File instances using the GLOBALFOUNDRIES 22nm FDX-PLUS CMOS...

2645 0.0

Dual Port Register File Compiler (1 Read-Only Port, 1 Write-Only Port) Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates Dual Port Register File instances using the GLOBALFOUNDRIES 22nm F...

2646 10.0

DDR4 & LPDDR4 COMBO IO for memory controller PHY, 3200Mbps, TSMCN22 The DDR4&LPDDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designe...

2647 10.0

DDR5 & DDR4 COMBO IO for memory controller PHY, 4800Mbps, TSMCN12 The DDR5&DDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designed ...

2648 0.0

768 x 1 Bits One Time Programmable Device D- Hite- Mixed-Signal 110 nm 1.2V/3.3V Process The ATO00768X1DB110SBM2NA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile m...

2649 0.0

sROMet compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 1M Foundry sponsored - sROMet compiler - TSMC 55 nm uLPeFlash - Non volatile memory optimized for high density and low power - Dual Voltage - compiler ra...

2650 0.0

LVDS I/O Buffer 40/28/22/16/7nm The LVDS I/O has driver and receiver of TSMC 7, 16, 22, 28, 40nm and Samsung 14nm process. ● Support LVDS specification is TIA/EIA-644-A. ● LVDS dri...