2601 0.0

512x1 Bits OTP (One-Time Programmable) IP, S-_h-nix HC130SFN 1.8V/2.8V Process The ATO00512X1HY180CIS3NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SK_hynix HC...

2602 0.0

Register File with low power retention mode and 3 speed options Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm...

2603 0.0

Register File with low power retention mode and 3 speed options Low Leakage. Mobile Semiconductor's SP-ULD-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm F...

2604 40.0

Register File with low power retention mode and 3 speed options Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm FDX ...

2605 30.0

Ultra Low Voltage (ULV) SRAM Mobile Semi delivers optimized, embedded SRAM solutions that are designed for the lowest operating voltages and lowest standby currents available in t...

2606 30.0

Single port SRAM Compiler - low power retention mode Silicon proven, qualified and in high volume production. Single Port compiler offers the lowest retention power on the market....

2607 0.0

Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...

2608 0.0

Single port SRAM Compiler - low power retention mode and column repair Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...

2609 0.0

Register File with low power retention mode, high speed pins on 1 side Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates single-port Register File instances using the Bulk 22ULL proce...

2610 0.0

Two port register file (1R1W) with low power retention mode Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates dual port Register File instances using the Bulk 22ULL proces...

2611 0.0

Single Port SRAM with low power retention mode, high speed pins on 1 side Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...

2612 0.0

Bulk 40ULP single port SRAM Compiler - ultra low power, low power retention mode Silicon proven, qualified and in high volume production. Single Port compiler offers the lowest retention power on the market....

2613 0.0

Bulk 40ULP Single Port SRAM with low power retention mode, high speed pins on 1 side Low Leakage. Mobile Semiconductor's Bulk 40 ULP BULKSRAM memory compiler generates memory instances using the premier low power 40nm process.. Each ul...

2614 40.0

Single port SRAM Compiler - low power retention mode Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...

2615 0.0

2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...

2616 0.0

Single Port, High Speed, Multi Bank SRAM Memory Compiler Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...

2617 0.0

Dual Port Register File Compiler (1 Read-Only Port, 1 Write-Only Port) Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates Dual Port Register File instances using the GLOBALFOUNDRIES 22nm FDX-PLUS CMOS...

2618 0.0

Dual Port Register File Compiler (1 Read-Only Port, 1 Write-Only Port) Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates Dual Port Register File instances using the GLOBALFOUNDRIES 22nm F...

2619 10.0

DDR4 & LPDDR4 COMBO IO for memory controller PHY, 3200Mbps, TSMCN22 The DDR4&LPDDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designe...

2620 10.0

DDR5 & DDR4 COMBO IO for memory controller PHY, 4800Mbps, TSMCN12 The DDR5&DDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designed ...

2621 0.0

768 x 1 Bits One Time Programmable Device D- Hite- Mixed-Signal 110 nm 1.2V/3.3V Process The ATO00768X1DB110SBM2NA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile m...

2622 0.0

sROMet compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 1M Foundry sponsored - sROMet compiler - TSMC 55 nm uLPeFlash - Non volatile memory optimized for high density and low power - Dual Voltage - compiler ra...

2623 16.0

Low leakage / Low Power Analog I/O - ESD protection for 0.75V / 1.2V / 1.8V / 3.3V / 5V Analog I/O and on-chip Electrostatic Discharge (ESD) protection. Proven on many foundries: TSMC, UMC, GF, TowerSemi, Samsung Foundry, ... Proven in ...

2624 16.0

Low capacitance Analog I/O - ESD protection for 0.75V / 1.2V / 1.8V / 3.3V / 5V Analog I/O and on-chip Electrostatic Discharge (ESD) protection. Proven on many foundries: TSMC, UMC, GF, TowerSemi, Samsung Foundry, ... Proven in ...

2625 16.0

Radiation Hard Analog I/O - ESD protection for 0.75V / 1.2V / 1.8V / 3.3V / 5V & cold-spare Analog I/O and on-chip Electrostatic Discharge (ESD) protection. Proven on many foundries: TSMC, UMC, GF, TowerSemi, Samsung Foundry, ... Proven in ...

2626 16.0

High ESD robustness protection for 0.75V / 1.2V / 1.8V / 3.3V / 5V - 8kV HBM & IEC 61000-4-2 Analog I/O and on-chip Electrostatic Discharge (ESD) protection. Proven on many foundries: TSMC, UMC, GF, TowerSemi, Samsung Foundry, ... Proven in ...

2627 16.0

High voltage tolerant Analog I/O - ESD protection for 1.8V / 3.3V / 5V / 12V ... Analog I/O and on-chip Electrostatic Discharge (ESD) protection. Proven on many foundries: TSMC, UMC, GF, TowerSemi, Samsung Foundry, ... Proven in ...

2628 16.0

Open-drain, Fail-safe, Hot-swap, Overvoltage tolerant, Cold-spare, I2C, I3C Analog I/O - ESD protection for 1.8V / 3.3V / 5V / 12V ... Analog I/O and on-chip Electrostatic Discharge (ESD) protection. Proven on many foundries: TSMC, UMC, GF, TowerSemi, Samsung Foundry, ... Proven in ...

2629 16.0

High voltage tolerant I/O for 1.8V / 2.5V / 3.3V / 5V ... Customizable GPIO with Power, performance, Area and Robustness benefits (PPA&R) Specialty Digital I/O and on-chip Electrostatic Discharge (ESD) prote...

2630 0.0

Synopsys High-Speed Test IO in TSMC N3P AI and HPC are transitioning to chiplet-based designs to overcome scaling limits of monolithic SoCs and achieve superior performance. While heterogene...

2631 0.0

True Random Number Generator IP Block Crypto Quantique’s hardware primitives that supplement the Root of Trust include the Physical Unclonable Function (PUF) & True Random Number Generator...

2632 0.0

22NM LVDS PHY IP The InPsytech Low-Voltage Differential Signaling (LVDS) is a well-established high-speed interface known for its excellent combination of fast data ra...

2633 0.0

SUB-LVDS TX PHY The InPsytech Low-Voltage Differential Signaling (LVDS) is a well-established high-speed interface known for its excellent combination of fast data ra...

2634 0.0

IPT OPTIMIZED STD CELL InPsytech comprehensive foundation IP portfolio offers a complete standard cell (STD) solution suitable for a broad range of system-on-chip (SoC) desi...

2635 0.0

UA11: 200Mbps 1.2V SLVS transceiver, UMC 110nm A compact 1.2V SLVS transceiver in UMC 110nm for high-speed, low-power links. It provides JESD8-13-compliant TX and RX paths up to 200Mbps with strong...

2636 0.0

TA22: 200Mbps 0.9V SLVS Transceiver, TSMC 22nm A 0.9V SLVS differential transceiver in TSMC 22nm, optimized for low-power, high-speed signaling. It supports data rates up to 200Mbps, complies with ...

2637 0.0

Radiation-Hardened GPIO, ODIO and LVDS Interface in SkyWater 90nm This Library, developed on SkyWater 90nm CMOS, delivers a radiation-hardened suite of robust interfaces covering general-purpose, open-drain, and high...

2638 0.0

VZ55: 1.8V/3.3V GPIO with I2C ODIO, analog I/O, GlobalFoundries 55nm A production-ready I/O library on GlobalFoundries 55nm CMOS, delivering a full digital and analog I/O suite with 2kV HBM / 500V CDM ESD and latch-up i...

2639 30.0

Embedded flash IP, 1.8V/5V TSMC 180nmBCD LEE Flash G1 (G1) is SONOS based eflash IP qualified by AEC Q100 Grade 1/0....

2640 35.0

Embedded flash IP, 1.5V/5V SMIC 90nmBCD LEE Flash G1 (G1) is SONOS based eflash IP qualified by AEC Q100 Grade 1/0....

2641 0.0

Standard Cell Libraries, GF 55nm Silvaco’s Standard Cell libraries deliver thousands of highly optimized cells with each one being optimized for power, area, speed, routing, and yield...

2642 0.0

TCAM Compilers for Samsung (14nm, 10nm, SF5A, SF4X) Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...

2643 0.0

TCAM Compilers for SMIC (28nm) Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...

2644 0.0

TCAM Compilers for TSMC (65nm, 40nm, 28nm, 16nm, N7, N6, N5, N4 Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...

2645 0.0

TSMC N3P 1.2V IO Platform supporting cells with Additional Features The AI and HPC industries are advancing toward chiplet-based designs to achieve superior performance, as traditional monolithic SoCs face scaling chal...

2646 140.0

VDPU (Vector Data Processing Unit) - The Dnotitia VDPU is a scalable IP core specifically designed to accelerate vector database operations. - It is a comprehensive solution that inclu...

2647 0.0

130GF_EEPROM_08 - 3.6Kbit EEPROM IP with configuration 28p8w16bit 130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages...

2648 0.0

NVM EEPROM NeoEE in DBHitek(180nm, 90nm) eMemory's NeoEE IP is a cost-effective embedded EEPROM solution for both foundries & customers. No additional masks are required, and NeoEE gives foun...

2649 0.0

Secure Storage Solution for OTP IP Synopsys Secure Storage Solution for OTP is an add-on solution to Synopsys One-Time-Programable (OTP) Non-Volatile Memory (NVM) IP, designed to addres...

2650 0.0

Ultra High Density, 5-track, 3nm channel length, 48nm poly pitch TSMC 2nm Plus Ultra High Density, 5-track, 3nm channel length, 48nm poly pitch TSMC 2nm Plus...