2051 1.0

0.7-3 GHz Low noise amplifier The RGLNA01 is 0.7 to 3.0 GHz high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier IP Block .The device is designed for use in the IEEE 802...

2052 1.0

2GHz-6GHz Low noise amplifier ...

2053 1.0

GaAs p-HEMT Monolithic integrated transceiver Front End Module suitable for 802.11b/g (2.4GHz) application RFISFRT01 is a monolithic integrated transceiver Front End Module suitable for 802.11b/g (2.4GHz) application. The IC contains all of the required com...

2054 1.0

1.7GHz-2.7GHz Two Stage Low Noise Amplifier A high efficiency CMOS 2 stage Low Noise Amplifier designed on 0.18µm SiGe BiCMOS process. The device is designed for use in the 802.11b/g and WLAN MI...

2055 0.0

UMC L40LP 40nm DDR DLL - 84MHz-420MHz The DDR DLL uses a reference clock to establish a time base in order to delay arbitrary (nonperiodic) strobe signals by precise fractions of the clock...

2056 1.0

0.5GHz-1.5GHz Voltage Controlled Oscillator RJVC01 is 0.5 - 1.15 GHz, voltage controlled oscillator. It can operate at 1.2 V supply and consumes only 2.5 mA current. The tuning bandwidth of the ...

2057 1.0

2GHz-6GHz Voltage Controlled Oscillator RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the o...

2058 1.0

1.5GHz-1.7GHz Low Noise Amplifier RJL02 is a narrow band low noise amplifier. This LNA is designed on 0.18 SiGe BiCMOS process. This device is design for GPS system application....

2059 1.0

2GHz-6GHz High Efficiency Broadband Low Noise Amplifier The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35-ìm SiGe BiCMOS technology. The device is designed...

2060 1.0

SiGe BiCMOS WCDMA Power Amplifier The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier...

2061 1.0

SiGe BiCMOS WLAN Power Amplifier The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for ...

2062 1.0

InGaP HBT low power buffer amplifier The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 ìm InGaP HBT process for high frequency applications. ...

2063 1.0

10-20GHz Differential Amplifier The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB ove...

2064 1.0

15GHz-20GHz Voltage Controlled Oscillator The GEV03 is 15 to 20 GHz broadband VCO designed on 2 um GaAs HBT process. The device is designed for high frequency applications. The resonator part ...

2065 1.0

10GHz-15GHz Broadband Voltage Controlled Oscillator GRV02 is broadband VCO designed on 2 um InGaP HBT Technology. The GRV02 is 10 to 15 GHz; broadband VCO designed on 2 um GaAs HBT Technology. The res...

2066 0.0

UMC L55LP 55nm DDR DLL - 164MHz-820MHz The DDR DLL uses a reference clock to establish a time base in order to delay arbitrary (nonperiodic) strobe signals by precise fractions of the clock...

2067 1.0

10GHz-20GHz Frequency Multiplier The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by t...

2068 1.0

2000 to 2800 MHz Phase Locked Loop ...

2069 1.0

2.4GHz-2.5GHz, 25dBm Power Amplifier ...

2070 1.0

1Watts, 2.1-2.8GHz Power Amplifier ...

2071 1.0

3 -4.5 GHz Power Amplifier ...

2072 1.0

0.80-0.96 GHz 2Watts, 900MHz band Power Amplifier ...

2073 1.0

2-8GHz Driver Amplifier ...

2074 1.0

Driver Amplifier 8-16GHz ...

2075 1.0

2 to 6 GHz Low Noise Amplifier Broadband Amplifier High Performance Low Current, Low Cost High Gain...

2076 1.0

0.4-4GHz Wideband Low Noise Amplifier ...

2077 0.0

Low Dropout (LDO) Capless Regulator 250mA - TSMC 7FF 1-VIA’s Linear Low-Dropout (LDO) voltage regulator IP is a capless LDO regulator which provides programmable precise voltage regulation across a wide ...

2078 0.0

UMC L55LP 55nm DDR DLL - 104MHz-520MHz The DDR DLL uses a reference clock to establish a time base in order to delay arbitrary (nonperiodic) strobe signals by precise fractions of the clock...

2079 1.0

1.7 to 2.5 GHz PCS/WCDMA band Low Noise Amplifier ...

2080 1.0

1.7-2.5GHz Low Noise Amplifier with High OIP3 ...

2081 1.0

7-20 GHz Driver Amplifier ...

2082 1.0

LOW POWER VOLTAGE REF ...

2083 1.0

Low Dropout Voltage regulator ...

2084 1.0

3 to 10GHz Low Noise Amplifier for UWB Application ...

2085 1.0

4.9 to 5.9GHz Power Amplifier ...

2086 1.0

5 GHz Low Noise Amplifier ...

2087 1.0

2 TO 6 GHz Driver Amplifier ...

2088 1.0

0.1 to 1 GHZ Frequency Divider ...

2089 0.0

UMC L55LP 55nm DDR DLL - 78MHz-390MHz The DDR DLL uses a reference clock to establish a time base in order to delay arbitrary (nonperiodic) strobe signals by precise fractions of the clock...

2090 1.0

Low noise amplifier for 28-40 Ghz frequencies for 5G, satcom and other applications RFLN05C is a four stage low noise amplifier. It provide high gain over wide bandwidth,low Noise Figure, high isolation, stability. The LNA is designed...

2091 1.0

Low noise amplifier with lange couplers for 20-40 GHz frequencies for 5G , satcom and other applications RFLN03C is a three stage low noise amplifier with Lange Coupler at input & output side for perfect input and output matching to 50 ohms. It provides h...

2092 1.0

Driver Amplifier operating from 10 - 24 GHz and can be used in wide band application or to drive the high-power amplifier RFDA02C Driver Amplifier operates from 10 - 24 GHz and can be used in wide band application or to drive the high-power amplifier. The amplifier provid...

2093 1.0

Driver Amplifier operating from 1-16 GHz and can be used in wide band application or to drive the high-power amplifier RFDA07C Driver Amplifier operates from 1 - 16 GHz and can be used in wide band application or to drive the high-power amplifier. The amplifier provide...

2094 1.0

Driver Amplifier operating from 35 - 46 GHz and can be used in Ka / V band applications or to drive the high-power amplifier RFDA12C Driver Amplifier operates from 35 - 46 GHz and can be used in Ka / V band applications or to drive the high-power amplifier. The amplifier pro...

2095 1.0

Driver Amplifier operating from 35 - 39 GHz and can be used in Ka band applications or to drive the high power amplifier RFDA13C Driver Amplifier operates from 35 - 39 GHz and can be used in Ka band applications or to drive the high power amplifier. The amplifier provide...

2096 1.0

RF SPDT Switch from 10-30 GHz used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation RFSW01C RF SPDT Switch is used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation....

2097 1.0

RF SPDT Switch from 20-40 GHz used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation RFSW05C RF SPDT Switch is used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation....

2098 1.0

RF SP3T Switch used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation RFSW02C RF SP3T Switch is used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation....

2099 1.0

Driver Amplifier operating from 24-30 GHz and can be used in wide band application or to drive the high-power amplifier RFDA06C Driver Amplifier operates from 24 – 30 GHz and can be used in Ka band application or to drive the high-power amplifier. The amplifier provides...

2100 0.0

UMC L65LP 65nm DDR DLL - 164MHz-820MHz The DDR DLL uses a reference clock to establish a time base in order to delay arbitrary (nonperiodic) strobe signals by precise fractions of the clock...