MOSYS ANNOUNCES THE START OF 1T-SRAM MEMORY TECHNOLOGY VALIDATION BY LUCENT
SUNNYVALE, CA and ALLENTOWN, PA (December, 11, 2000) - MoSys, Inc. announced today that Lucent's Microelectronics Group has started validation of MoSys' 1T-SRAM memory technology by porting it to the Lucent CMOS logic process.
"With the increasing trend toward system-level integration, there is a continuous need to look at innovative ways of achieving higher density memory solutions," commented Simeon Aymeloglu, Manager of Embedded Memory Technology Development for Lucent's Microelectronics Group. "MoSys' approach is one we are validating to achieve improved densities over conventional SRAM."
"We are excited to work with Lucent's Microelectronics Group as it validates the 1T-SRAM for increasing memory density in communications ICs and other embedded memory applications," noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc.
Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve higher density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells. Embedded 1T-SRAM memory technology allow designers to get beyond the density limits of six-transistor embedded SRAM. With improved density, this technology offers significant saving in power consumption by using under a quarter of the active power of traditional high performance SRAM memories. 1T SRAM technology has been volume production proven and MoSys has produced millions of units of discrete memory devices using this 1T-SRAM technology.
MoSys, Inc. is a semiconductor technology company specializing in innovative, high performance, random access memories based on its patented 1T-SRAM architecture. Founded in 1991, the company develops innovative memory technology for licensing to semiconductor and systems companies. MoSys also uses this technology to produce its own memory products. The company?s unique memory architecture has been proven in the volume production of discrete memory devices. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. The company is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086. More information on MoSys is available at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered trademarks are the property of their respective owners.