ProMOS Debuts First 90nm Silicon with High Yield
This is the first pilot product of 512Mb DRAM by 90nm stack process technology at ProMOS 300mm Fab 3. With completion of functional test on July 8, 2005, the yielding die of 512Mb DRAM also demonstrates the first chip out by 90nm process technology at ProMOS 300mm Fab 3.
Since groundbreaking construction commencement in April 2004, the first wafer has already shown impressed yield performance at 300mm Fab 3 within 14 months, further illustrating ProMOS’ fab operating efficiency and technological competency.
Based on this preliminary success, ProMOS will continue the manufacturing process and product verifications according to the planned schedule. Projected wafer starts of 15K/month and 30k/month are to be executed by Q106 and Q406, respectively.
About ProMOS
ProMOS Technologies, Hsin-chu, Taiwan, is a full-blown memory solution provider and is renowned in the global DRAM industry for its outstanding performance in manufacturing excellence and technology advancement. The company manufactures high-performance and high-density commodity DRAM memory chips as well as pseudo-SRAM, lower power SDRAM and MCM products. ProMOS is listed on Taiwan GreTai Securities Market. For more information, please visit www.promos.com.tw.
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