August 9, 2005
-- ProMOS Technologies (5387.TWO) today announced that the pilot run result of 90nm stack technology node at ProMOS 300mm Fab 3 has successfully performed with production yield at 80%. Early deploying the mass production schedule of 90nm stack technology node amid the remarkable pilot run result should further fuel company operating performance through production cost decrease.
Dr. Ben Tseng, VP of Sales & Marketing Group and corporate spokesman, noted that the first pilot product of 512Mb DDR DRAM by 90nm stack process technology at ProMOS 300mm Fab 3 was successfully released with impressed production yield at 60% on July 8, 2005. Full-line pilot run of the 90nm was implemented following the first batch release and the full line production yield reached at 80%. The remarkable achievement was only possible through the relentless efforts by every one associated with Fab 3. It is projected that 10 K 300mm wafer out by 90nm in Q4 due to the pull-in 90nm mass production schedule.
Dr. Ben Tseng further stated that projected wafer starts of 7K/month in Q405 at PrOMOS 300mm Fab 3. Wafer starts of 15 k/month and 30k/month are to be executed by Q106 and Q406, respectively. By 2007, the maximum capacity at ProMOS Fab 3 will reach 40 k/month - 45 k/month. About ProMOS
ProMOS Technologies, Hsin-chu, Taiwan, is a full-blown memory solution provider and is renowned in the global DRAM industry for its outstanding performance in manufacturing excellence and technology advancement. The company manufactures high-performance and high-density commodity DRAM memory chips as well as pseudo-SRAM, lower power SDRAM and MCM products. ProMOS is listed on Taiwan GreTai Securities Market. For more information, please visit www.promos.com.tw