MoSys(R) 1T-SRAM(R) IP Unbounds Azul Systems(R) Network Attached Processing Compute Appliances
SUNNYVALE, Calif.--Oct. 11, 2005--MoSys, Inc., the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced today the silicon validation of MoSys' 1T-SRAM® high-density, high-performance embedded memory technology within Azul System's Vega multiprocessor. The device is now in volume production using 1T-SRAM® technology for its embedded memory.
"Azul Compute Appliances are designed to meet today's requirements for a highly-reliable, on demand compute resource," says Scott Sellers, vice president of hardware engineering and CTO at Azul Systems. "We chose MoSys' 1T-SRAM embedded memory technology with redundancy, built-in error checking and error correction features along with its high-performance capabilities which allow our products to deliver the enterprise class reliability, availability, and serviceability needs of our customers."
"Azul Systems is a recognized industry leader in the emerging networked attached processing market and we are very pleased that they have selected 1T-SRAM technology for their embedded high-density memory needs," said Chet Silvestri, chief executive officer of MoSys. "By meeting their demanding reliability and performance requirements, MoSys sets a very high standard in providing memory products addressing mission critical, yet affordable system solutions."
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY - News), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
|
Related News
- Teknovus Licenses MoSys 1T-SRAM(R) for Their Gigabit Ethernet Passive Optical Network (GEPON) Chip Sets
- MoSys and Open-Silicon Pound Tharas Systems Design Into Production; Tharas Systems Hammer(R) Verification Appliances Powered by Large Number of High-Speed 1T-SRAM Memory
- LG Electronics Shipping MoSys 1T-SRAM(R) DDI Technology in AMOLED-Based Mobile Phone
- MoSys and BiTMICRO Networks Sign Agreement for High-Performance 1T-SRAM(R) Memory Macro Geared for Family of Portable E-Disk Storage Solutions
- Fujitsu Licenses MoSys 1T-SRAM(R) Technology for Its Leading-Edge 65nm Semiconductor Manufacturing Process
Breaking News
- Arteris Joins Intel Foundry Accelerator Ecosystem Alliance Program to Support Advanced Semiconductor Designs
- SkyeChip Joins Intel Foundry Accelerator IP Alliance
- Siemens and Intel Foundry advance their collaboration to enable cutting-edge integrated circuits and advanced packaging solutions for 2D and 3D IC
- Cadence Expands Design IP Portfolio Optimized for Intel 18A and Intel 18A-P Technologies, Advancing AI, HPC and Mobility Applications
- Synopsys and Intel Foundry Propel Angstrom-Scale Chip Designs on Intel 18A and Intel 18A-P Technologies
Most Popular
- QuickLogic Delivers eFPGA Hard IP for Intel 18A Based Test Chip
- Siemens collaborates with TSMC to drive further innovation in semiconductor design and integration
- Aion Silicon Joins Intel Foundry Accelerator Design Services Alliance to Deliver Next-Generation Custom SoCs at Scale
- TSMC Unveils Next-Generation A14 Process at North America Technology Symposium
- BOS Semiconductors to Partner with Intel to Accelerate Automotive AI Innovation
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |