Quantum well FETs, germanium, InGaAs in mix
by Rick Merritt, Apr. 21, 2015 –
SAN JOSE, Calif. - A semiconductor analyst is making a bold and detailed prediction about the process technology Intel Corp. will use for its next two generations. If he is right, the world’s largest chip maker is set to leapfrog the industry once again.
Intel will use quantum well FETs starting with its 10nm process, said David Kanter in an analysis posted on his Real World Technologies Web site. The new transistor structures will use two new materials - indium gallium arsenide (InGaAs) for n-type transistors and strained germanium for p-type devices, he said.