Move is First Step Towards Company's Patent Portfolio Protection Strategy SUNNYVALE, Calif.--Dec. 19, 2005--MoSys, Inc. (Nasdaq:MOSY - News), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today that Monte Crawford has joined MoSys in the position of Chief Corporate Counsel. Monte's responsibilities will include directing the MoSys licensing program, managing general corporate governance, and other commercial legal matters.
Monte brings to MoSys more than 10 years of legal experience in the semiconductor, systems and service industries at companies including Compaq Computers (now HP) and SBC Communications. He has extensive experience in contract management, Intellectual Property (IP) licensing and portfolio management, Sarbanes-Oxley Compliance, and Mergers and Acquisitions. Most recently he was at LSI Logic Corporation where he was the Senior Corporate Counsel for the Commercial Law Group.
"MoSys' expanding business and extensive intellectual property portfolio demanded a full time internal corporate counsel and Monte is the perfect fit for that function," mentioned Chet Silvestri, Chief Executive Officer of MoSys. "MoSys has a long successful track record of designing and developing some of the world's most advanced memory technologies, and the addition of Monte to our team strengthens our efforts in recognizing and defending the many contributions made by our engineering team to the semiconductor intellectual property industry."
"I am very excited with the opportunity of joining MoSys and its legendary team of technology innovators," expressed Monte Crawford. "MoSys' 1T-SRAM® technology is a very valuable asset and protecting it is a challenge that I will face with all my energy."
About Mosys, Inc. Founded in 1991, MoSys (Nasdaq:MOSY - News), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at
http://www.mosys.com.
