SANTA CLARA, Calif.--Jan. 16, 2006
--Innovative Silicon Inc. (ISi), the developer of Z-RAM(TM) high density memory IP, today announced that Jeff Lewis has joined the company as VP of Marketing. Based in the company's U.S. Headquarters, Lewis is charged with managing the company's marketing and business development programs.
"ISi has a great team, strong backing, and one of the most compelling IP technologies I've seen," said Lewis. "Embedded memory is typically the largest block on a complex IC, meaning memory has a critical impact on IC cost, performance, and power consumption. Z-RAM is twice the density of embedded DRAM and five times the density of SRAM, making it -- by far -- the most cost-effective solution for the majority of embedded memory applications."
"We welcome Jeff to our organization as he is a well-known pioneer in the IP industry and brings the business and marketing expertise that will help take our business to its next stage of growth," noted Mark-Eric Jones, president and CEO of ISi. "With Jeff on board, we have assembled a truly world-class team of experienced executives and technologists."
Lewis has over 22 years of marketing, engineering, and management experience in the semiconductor IP, electronic design automation, and semiconductor industries. He was most recently president and CEO of CiraNova, Inc.
Prior to CiraNova, Lewis was Senior VP of Marketing at FormFactor, where he led the company's licensing efforts. Prior to that, he was VP of Marketing and Business Development at Artisan Components, where he ran the company's "free library" program. Currently, Lewis is also a director at IPextreme, a semiconductor IP company.
About Innovative Silicon
Incorporated in 2002, Innovative Silicon was founded to develop and commercialize Floating Body effect memory for SoC/MPU products used in diverse applications including microprocessors, handheld computers, game consoles, cellular communications devices, and cameras. The company closed its first round of VC funding in 2003, completed its first 90nm megabit Z-RAM memory designs in 2004 and its first 65nm designs in 2005. The company is incorporated in the USA with R&D in Lausanne, Switzerland. For more information, see http://www.z-ram.com.