X-FAB Offers IP Blocks for RF Designs

Speeds up implementation of RF circuitry into working silicon

Erfurt, Germany, February 21, 2006: X-FAB Semiconductor Foundries AG, one of the world's leading analog mixed-signal semiconductor foundries, has extended its IP offering to include RF building blocks for its 0.6 µm BiCMOS technology. This XB06 process technology is ideal for the design of radio-frequency ICs for operating frequencies up to 1 GHz. Available now, the building blocks are optimized for the 868 MHz ISM band, an operating frequency range typically used for wireless data transmission in automotive, computer and consumer applications.

The XB06 design kit (TheKit) contains RF-passive devices such as inductors, varactors and MIM-capacitors. It also includes RF-optimized bipolar transistors. X-FAB developed and also is making available an additional analog library containing typical RF building blocks (LNA, LC-VCO, Prescaler), fully characterized and documented to facilitate the design of RF-ASICs. To allow a broad range of applications, the RF building blocks are functional in a wide range of supply voltage from 2.5 V to 5.5 V.

"Using these high-performance, well-characterized RF building blocks is a fast and efficient way for our customers to implement their RF developments into working silicon," said Dr. Jens Kosch, Chief Technical Officer at X-FAB.

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