by Richard Wilson - Electronics Weekly, Jun. 24, 2015 –
Exagan, a French start-up spun out of CEA-Leti and Soitec to develop gallium-nitride (GaN) power semiconductors, has raised €5.7m in first-round financing that will be used to produce high-speed power switching devices on 200mm wafers.
Exagan, which is working with European foundry X-FAB to produce devices on 200mm wafers, is aiming to be Europe's primary supplier of GaN-based power switches for the solar and automotive markets.
In partnership with CEA-Leti, Grenoble-based Exagan is developing the G-FETTM 650V power-switching platform.