400G ultra low latency 56/112G FEC and SERDES IP sub 10ns latency
X-FAB Reduces Die Size with New Trench-Isolated SOI CMOS Technology
XT06 Delivers 0.6 µm Process Technology with Added Benefits at Cost of CMOS
ERFURT, Germany, May 24, 2006 – X-FAB Semiconductor Foundries AG, one of the world's leading
analog mixed-signal semiconductor foundries, today announced XT06, its new 0.6 micrometer Silicon
On Insulator (SOI) CMOS technology with trench isolation. This innovative process technology delivers
X-FAB’s modular, flexible 0.6 micrometer CMOS technology platform XC06 on a new SOI substrate –
reducing die size by up to 40 percent and making it cost-competitive with CMOS technology. XT06
technology is ideal for power management, automotive, optical, industrial and other applications that
can benefit from smaller die size, less-complex circuit design with fewer loops, higher speed and lower
power consumption.
The XT06 SOI CMOS technology adds features and benefits that standard CMOS technology lacks.
Reduced parasitics result in less substrate noise and crosstalk, allowing designers to consider each
device independently. X-FAB is one of the first companies to offer unrestricted high- and low-side
operation for all devices up to 60 V, freeing designers from concern about certain design regulations.
This "potential-free" design of XT06 lets designers conveniently isolate certain areas using the trenches
and apply any voltage level to those islands.
Dr. Jens Kosch, chief technical officer at X-FAB said, "X-FAB is pleased to make such advanced technology
available which is cost-competitive with CMOS technology. The XT06 SOI benefits create unprecedented
mixed-signal circuit design possibilities for power management, smart motor control, and ClassD audio
amplifier applications where bulk CMOS technologies are insufficient."
The XT06 is compatible with X-FAB’s XC06 modular mixed-signal technology, and the 5 V CMOS core is
compatible in design rules and transistor performance with state-of-the-art 0.6 micrometer CMOS
processes. MOS transistors are available with breakdown voltages up to 110V.
the double-poly architecture, and precision analog devices with low temperature coefficients. X-FAB
provides reliable design rules, precise SPICE models, analog and digital libraries, IPs and development
kits to support design engineers who use the XT06 technology.
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