Broad IP Platform Enables Fast, Low-Power, Low-Leakage Designs
Santa Clara, California – August 8, 2006 - MOSAID Technologies (TSX: MSD) and K-MICRO today announced that the MOSAID Mobilize™ IP (intellectual property) platform will be integrated into K-MICRO's low-power, low-leakage 90nm ASIC products. K-MICRO selected MOSAID Mobilize because the platform fully addresses key leakage issues at 90nm and below, by including all critical power management components and supporting the techniques required to address both static and active power management.
"We believe that the use of the MOSAID Mobilize IP platform has enabled our products to more capably support the sophisticated needs of our customers in low-power consumer, as well as the low standby power requirements for office automation, and high speed networking applications," said Joel Silverman, K-MICRO Vice President of Technology Solutions. "The leakage inherent in our leading processes, has been virtually eliminated by MOSAID Mobilize, helping us deliver a power-optimized solution without sacrificing performance."
"K-MICRO's ASICs are differentiated by their stringent power and performance characteristics," said Michael Kaskowitz, Senior Vice President, Semiconductor IP, MOSAID. "Our Mobilize low-power IP platform is a natural fit for K-MICRO's design methodologies, and allows their products to reduce active and standby power far beyond alternative methods for the most demanding applications."
About MOSAID Mobilize
The MOSAID Mobilize low-power IP platform is the first integrated solution fully addressing leakage at 90nm with all the critical elements and patented techniques required to address static and active power management. The standard cells are easily configured to form a power island that can voltage scale and frequency scale (See MOSAID Maestro PLL family) and preserve state during sleep while still providing very high clock rate performance. A sophisticated mixed-signal controller, called the integrated Power Island Manager, sequences the active and sleep phases of a power island reliably over PVT (process/voltage/temperature) while reducing leakage over 100x. The MOSAID Mobilize SRAM compiler produces SRAMs with the lowest power consumption, and the lowest leakage of any generic CMOS semiconductor IP in the industry. To keep the total SoC power and leakage budget on track the specially designed, multi-standard Programmable Basic I/O and ring kit are optimized for performance while keeping power leakage low.
K-MICRO is a leader in advanced yet affordable ASIC technology. The company's innovative technologies and world-class design support are used in the consumer electronics, computer, office-automation, networking and storage markets. The company is an active participant in industry standards organizations, including, Optical Internetworking Forum (OIF), PCI Special Interest Group (PCI-SIG), USB Implementers Forum, Digital Living Network Alliance (DLNA), Universal Plug and Play Forum (UPnP), Mobile Computing Promotion Consortium (MCPC), the Digital Display Working Group (DDWG), and OCP International Partnership (OCP-IP). K-MICRO has design centers in Boston, San Jose, Taipei, and Tokyo. For more information, contact the company at 408-570-0555, or visit www.k-micro.us
MOSAID Technologies Incorporated makes semiconductors better through the development and licensing of intellectual property and the supply of memory test and analysis systems. MOSAID counts many of the world's largest semiconductor companies among its customers. Founded in 1975, MOSAID is based in Ottawa, Ontario, with offices in Santa Clara California; Newcastle upon Tyne, U.K; and Tokyo, Japan. For more information, visit www.mosaid.com.