Mosaid, ADI optimize embedded DRAM macrocell for DSP

Mosaid, ADI optimize embedded DRAM macrocell for DSP
By EBN Staff, EBN
July 20, 2000 (4:11 p.m. EST)
URL: http://www.eetimes.com/story/OEG20000720S0031

Analog Devices Inc. and Mosaid Technologies Inc. today announced they have completed a fast-access embedded DRAM macrocell for use in semiconductor design.

The jointly developed macrocell will enable more than 10 times more memory to be integrated with ADI's digital signal processors. The companies said pplications such as wireless and broadband communications will benefit from reducing the number of chips in the system, which in turn reduces system power consumption and size.

Software requirements are driving the need for new levels of memory integration. While DRAM has long-offered density advantages, it previously lacked the performance required for real-time signal processing. This technology enables high performance solutions to be developed for DSP applications.

"ADI had critical requirements for their industry-leading DSP solutions, and the Mosaid design team responded by developing a completely new macrocell architecture," said Dan M athers, senior vice president and general manager of Mosaid Semiconductor. "We were able to create a unique product that offers two significant advantages. One, by using embedded DRAM, we eliminate the die-size issues that are a concern with SRAM; and two, our chip architecture offers increased random access cycle speed over current DRAM-based technology."

ADI chose Mosaid because of its ability to solve the challenge of getting embedded DRAM on high performance DSPs, said Bob Conrad, vice president of Analog Devices' DSP Division. "The next frontier of DSP applications will require SRAM performance with DRAM density. The Mosaid macrocell boasts an SRAM-like interface, which allows us to easily implement the product with our DSP products and use this improved performance without extended design-in or redesign time."