Z-RAM Memory Company Expands Executive Team
SANTA CLARA, Calif.-- January 17, 2007 --Innovative Silicon Inc. (ISi), the developer of Z-RAM® high density memory intellectual property (IP), today announced that Daniel LaBouve has joined the company as vice president of engineering. Reporting to ISi CEO, Mark-Eric Jones, LaBouve will be responsible for managing and building the company’s engineering team and driving product development programs.
“Dan is a natural fit to ISi as he brings a wealth of experience in developing world-renowned IP products and building first class engineering organizations,” said Mark-Eric Jones. “He is joining the company at a perfect point in our growth as we have just released Z-RAM Gen2, our ultra dense memory technology that delivers excellent density, power and performance. With Dan’s talent and experience, we are well poised to build upon our existing Z-RAM technology, which is now positioned for broader market adoption.”
LaBouve commented, “ISi is a truly impressive company that has already established the three key ingredients that I look for in a firm … a large addressable market, differentiating intellectual property, and good people. I am really excited to join the company at this point in time and to expand upon the already impressive engineering efforts that have brought the company’s Z-RAM memory technology to its current leadership position.”
LaBouve brings over 20 years of experience to Innovative Silicon. Most recently, he was vice president of engineering for ARM’s [(LSE:ARM); (Nasdaq:ARMHY)] Physical IP Division. There, he directed multi-site engineering operations with an annual license revenue of more than $60 million and an organization of approximately 360 engineers. Before this, he was senior director of engineering at Artisan Components where he oversaw standard cell, embedded memory, I/O, silicon technology and validation, and technical publications. He also brings engineering experience from Mentor Graphics, NCR Corporation, and the Delco Electronics Division of General Motors. LaBouve received a bachelor of science degree from the University of California, Santa Barbara. He has also filed a number of patents for the purpose of improving integrated circuit design performance.
About Innovative Silicon
Innovative Silicon Inc. (ISi) delivers ultra high density memory IP for embedded SoC, MPU, and portable consumer applications. Endorsed by IEEE Spectrum Magazine in January 2007 as one of five ‘winning’ technologies, ISi's Z-RAM® memory offers double the density of embedded DRAM and is up to five times denser than embedded SRAM, making it the world’s lowest-cost semiconductor memory solution. The company closed its first round of VC funding in 2003, completed its first 90nm megabit Z-RAM memory designs in 2004, its first 65nm designs in 2005 and its first 45nm designs in 2006. The company is incorporated in the USA with R&D in Lausanne, Switzerland. For more information see http://www.z-ram.com.