By Richard Wilson - Electronics Weekly, Oct. 28, 2015 –
The platform incorporates software-controlled transistor body-biasing that are designed to provide trade-offs between power and performance.
"Delivering FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies," says Globalfoundries.
Earlier this year, Leti assigned a team of experts to Globalfoundries' wafer fab in Dresden, Germany to support ramp up of the platform.
The French semiconductor technology centre will provide circuit-design IP, including its back-bias feature for FD-SOI, which it claims improves performance at very low voltages with low leakage.