2nTP antifuse technology bridges the gap between one-time programmable and Multi-Time Programmable non-volatile memories
Hermitage, PA. – December 2, 2009 – Novocell, an intellectual property (IP) provider to the semiconductor industry, known for its highly dependable antifuse technology, today announced the development of 2nTP, a new multi-time programmable (MTP) technology that allows the programming of its one-time programmable (OTP) antifuse bit cell up to eight (8) times. 2nTP can be configured as a two, four, or eight times write, and it is based on the NovoBlox™ bit cell, a non volatile memory (NVM) already proven at leading foundries.
"There has always been a gap between one-time programmable memories and multi-time programmable memories. What if the designer only wants to write it twice and doesn’t want to allocate silicon for multiple OTP blocks?" asks Novocell’s senior designer Walt Novosel.
"We see our customers needing to write two, four or even eight times, putting down multiple OTP instances for this functionality. The area impact becomes significant and decreases their design flexibility" said Steve Warner, Novocell’s President. “With the new 2nTP memory, users can save up to 300% in area on a four-times write block, versus using four individual OTP instances.”
About 2nTP Technology:
Novoblox, known as one of the leading OTP antifuse cells for its reliability, is patented and silicon-proven at major foundries. The new 2nTP technology is scheduled for release in 1Q2010 in ROM array sizes from 64 bits to 8Kbits.
About Novocell Semiconductor:
Novocell Semiconductor, Inc. specializes in developing and delivering advanced non-volatile memory intellectual property (IP) to the semiconductor industry. Novocell's design team has extensive experience in memory IP development, including SRAM, DRAM, EEPROM, Flash. The Novocell team released NovoBlox, its OTP product line, in 2006.
For more information, please contact Steve Warner, President at firstname.lastname@example.org or visit http://www.novocellsemi.com.