Peter Clarke, EETimes
2/28/2011 3:39 PM EST
GRENOBLE, France – The 10-nm process node appears to be the ideal point for the adoption of manufacturing on 450-mm diameter wafers, according Leonard Hobbs, head of research for Intel Ireland. Speaking at the Industry Strategy Symposium here (ISS Europe) he also indicated that the transition could not come sooner and could be pushed later, depending on the efficacy of industry collaboration.
Hobbs portrayed the transition taking place 2015 to 2017.
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