Peter Clarke, EETimes
9/24/2012 1:00 PM EDT
LONDON – Chip giant Intel and the research partnership clustered around IBM and STMicroelectronics are each set to report progress on their approaches to leading-edge IC manufacturing during the International Electron Devices Meeting (IEDM) in San Francisco in December.
Research teams are set to present on the FinFET approach--called tri-gate by Intel--on fully-depleted silicon-on-insulator (FDSOI) and on bulk planar processes at around 20 nm and beyond.
Click here to read more ...