Dolphin Integration introduces a new generation of SpRAM at 55 nm

Grenoble, France – November 26, 2012 -- Dolphin Integration is releasing RHEA, the latest memory architecture of its SpRAM family, for power and cost sensitive SoCs at 55 nm TSMC technological processes.

The SpRAM RHEA generator leaves far behind any competing SpRAM

Illustration with 4kx32 memory cut

The SpRAM RHEA not only provides the best combination of density, speed and power consumption:

• Up to 30% denser than standard High-Speed memory generator while maintaining an equivalent speed range
• 10% less consuming and 9% denser compared with traditional Low-Power and High-Density memories, but RHEA also includes a crucial functionality:
• Data retention mode both at 1.2 V and 0.77 V for ultimate leakage savings

The SpRAM generator RHEA is specially suited for consumer multimedia applications such as MP3 player, E-reader, or game console.

For more information, feel free to download the Presentation Sheet or to contact Dolphin’s Library Marketing Manager at ragtime@dolphin.fr to get access to the SpRAM RHEA FE generator

About Dolphin Integration

Dolphin Integration is up to their charter as the most adaptive and lasting creator in the Microelectronics Design Industry to "enable mixed signal Systems-on-Chip". It stars a quality management stimulating reactivity for innovation as well as independence and partnerships with Foundries. Their current mission is to supply worldwide customers with fault-free, high-yield and reliable sets of CMOS Virtual Components, such as mixed signal high-resolution converters for audio and measurement applications, Libraries of memories and standard cells, Power management networks, Microcontrollers. The strategy is to follow product launches with evolutions addressing future needs, emphasizing resilience to noise and drastic reductions of power-consumption at SoC level, thanks to their own missing EDA solutions enabling Support Engineering with Application Hardware Modeling as well as early Power and Noise assessment, plus engineering assistance for Risk Control

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