Peter Clarke, EETimes
12/12/2012 7:02 AM EST
LONDON – Documents presented at the fully depleted silicon on insulator (FDSOI) workshop in San Francisco this week show that the FDSOI roadmap now omits a 20-nm and goes straight to 14-nm and then on to 10-nm.
A summary slide from Horacio Mendez, executive director of the SOI Consortium, showed the jump with the comment that 14-nm FDSOI would be offered at the same time as Intel's 14-nm FinFET and would show the same performance characteristics but realizable at much lower cost. A presentation by Joel Hartmann, executive vice president of front-end process for STMicroelectronics, at the same meeting, organized by the SOI Consortium, also shows the move from 28-nm FDSOI, a process that is has started to ship in the second-half of 2012, on to 14-nm FDSOI and then 10-nm FDSOI.
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