ARM Support Claimed for Non-Filamentary ReRAM

Peter Clarke, Electronics360
31 January 2014

An innovative non-volatile memory technology that could scale further and perform better than flash memory and resistive RAM (ReRAM) technologies has attracted the interest of processor licensor ARM Holdings plc (Cambridge, England), according to Carlos Paz de Araujo, a professor at the University of Colorado who is the leading advocate for development of the memory.

Professor Araujo told Electronics 360 that his company Symetrix Corp. (Colorado Springs, Colo.) has secured ARM's support for research into a non-filamentary, non-volatile memory technology based on the metal-insulator Mott transition in nickel oxide and other transition metal oxides (TMOs). In email correspondence he said that Symetrix, ARM, the University of Colorado at Colorado Springs and the University of Texas at Dallas, are engaged in research on what he has dubbed Correlated-Electron RAM (CeRAM).

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