Meylan, France – April 23, 2014 -- The high-density and low-power foundry-sponsored generators, sROMet PHOENIX and DpRAM ERIS (HVT and SVT), are now available in the eFlash process variant for the 90 nm node.
These products come to enrich the panoply of Dolphin Integration at 90 nm eF:
PHOENIX and ERIS are designed to reach the highest density and to offer low power consumption features.
- Thanks to their proprietary bit cell, the ROM PHOENIX allows a gain up to 10% in density versus alternative solutions at 90 nm and to allow a drastic reduction of the power consumption thanks to its dual voltage capability.
- The DpRAM allows ultra-low leakage thanks to its HVT bitcell.
This panoply for eFlash process is completed by a unique cache controller, which allows to upgrade to 3 times faster and 3 times lesser power consumption compared to a stand alone eFlash memory.
For performance data:
- sROMet PHOENIX TSMC 90 nm eFlash click here
- DpRAM ERIS TSMC 90 nm eFlash
Feel free to contact Dolphin Integration Library Marketing Manager at email@example.com
About Dolphin Integration
Dolphin Integration contribute to "enabling mixed signal Systems-on-Chip". Their focus is to supply worldwide customers with fault-free, high-yield and reliable kits of CMOS Virtual Components of Silicon IP, based on innovative libraries of standard cells, flexible registers and low-power memories. They provide high-resolution converters for audio and measurement, regulators for efficient power supply networks, application optimized micro-controllers.
They put emphasis on resilience to noise and drastic reductions of power-consumption at system level, thanks to their own EDA solutions missing on the market for Application Hardware Modeling as well as early Power and Noise assessment. In addition strong experiences in ASIC/SoC design and fabrication, plus privileged foundry portal even for small or medium volumes, make them a genuine one-stop shop covering all customers’ needs for specific requests.