Hung-Chang Yu, Ku-Feng Lin, and Yu-Der Chih, Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, ROC, Aug. 22, 2017 –
Abstract: "This paper presents a 40nm 9.5Mb embedded flash (eflash) macro which can be partitioned as code storage and data storage in a single macro with enhanced read margin by using two design schemes: temperature adaptive reference scheme and flexible array partitioned scheme. By way of these design features, code storage memory achieves 140MHz read speed at the junction temperature of 160 C and data storage memory achieves 1M cycles endurance."