R. Colin Johnson, EETimes
1/15/2015 11:00 AM EST
PORTLAND, Ore. -- Universal memory replacing DRAM, SRAM, flash and nearly every transistor in a computer may result from their successful fabrication of a ferroelectric gate over germanium channel material, according to researchers at the University of Texas (Austin). Their successful ferroelectric gate stack holds the hope of extending Moore's Law beyond the end of the International Technology Roadmap for Semiconductors (ITRS) circa 2028.
"We have not yet built a complete ferroelectric field-effect transistor -- or FeFET -- but we have proven that our detailed simulations on the supercomputer at the Texas Advanced Computing Center can be realized in the lab," professor Alexander Demkov told EE Times. "What we have done is build the complete gate stack and gotten the material and fabrication techniques right -- our next step will be to fabricate the germanium channel to complete the FeFET."
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