IBM Demos III-V FinFETs on Silicon
CMOS Compatible Process for Advanced Nodes
R. Colin Johnson, EETimes
6/18/2015 10:20 PM EDT
PORTLAND, Ore.--The entire semiconductor industry is trying to find a way to exploit the higher electron mobility of indium, gallium and arsenide (InGaAs) without switching from silicon substrates, including the leaders at Intel and Samsung. IBM has demonstrated how to achieve this with standard CMOS processing.
Last month IBM showed a technique of putting III-V compounds of InGaAs onto silicon-on-oxide (SOI) wafers, but now a different research group claims to have found an even better way that uses regular bulk-silicon wafers and have fabricated the InGaAs-on-silicon FinFETs to prove it.
"Starting from a bulk silicon wafer, instead of SOI, we first put down an oxide layer and make a trench through to the silicon below, then grow the indium gallium arsenide from that seed--its a very manufacturable process," Jean Fompeyrine, manager of advanced functional materials told EE Times. Fompeyrine performed the work with Lukas Czornomaz, an advanced CMOS scientist with IBM Research.
E-mail This Article | Printer-Friendly Page |
Related News
Breaking News
- After TSMC fab in Japan, advanced packaging facility is next
- A System On Module (SoM) developed by Electra IC: BitFlex-SPB-A7 FPGA SoM
- Weebit Nano to demo its ReRAM technology on GlobalFoundries' 22FDX® platform
- SoC Secure Boot Hardware Engine IP Core Now Available from CAST
- QuickLogic and Zero-Error Systems Partner to Deliver Radiation-Tolerant eFPGA IP for Commercial Space Applications
Most Popular
- Former Moortec executives create chip monitor startup
- PrimisAI Unveils Premium Version of RapidGPT, Redefining Hardware Engineering
- Arteris Expands Ncore Cache Coherent Interconnect IP To Accelerate Leading-Edge Electronics Designs
- Arm Announces New Automotive Technologies to Accelerate Development of AI-enabled Vehicles by up to Two Years
- Arm's Broadest Ever Automotive Enhanced IP Portfolio Designed for the Future of Computing in Vehicles