Ultra-dense memory technology to be used in 0.13-micron standard logic process for ultra-low powered cellular SoC solutions.
SUNNYVALE, CALIFORNIA (September, 16, 2002) –MoSys, Inc. (NASDAQ: MOSY) the industry's leading provider of high density SoC embedded memory solutions, today announced the licensing of MoSys' 1T-SRAMÒ embedded memory technology to National Semiconductor . The 1T-SRAM embedded memory technology is an innovative solution that National will use to enable the incorporation of high performance, high density embedded memory blocks into their future cellular baseband SoCs.
"The 1T-SRAM embedded memory solution was evaluated according to our requirements. MoSys' technology offers unique performance, density and ultra-low power capabilities not available from other standard SRAM technologies. By using MoSys' 1T-SRAM embedded memory, our customers will benefit from the high density, low power advantages this technology delivers," said Mal Humphrey, director of the cellular solutions product line within National Semiconductor's wireless division.
The license agreement will initially be used for products built in the 0.13-micron process generation using MoSys' recently announced 1T-SRAM-R™ technology that incorporates Transparent Error Correction™ (TEC™ ) to eliminate the need for the laser repair manufacturing step while providing improved soft error rate, yield and reliability compared to other embedded memory technologies.
"We are excited that an industry frontrunner like National Semiconductor has joined the growing list of companies choosing MoSys'1T-SRAM technology," said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "In leading-edge process geometries, 1T-SRAM can lower standby power and help avoid the increasing bitcell leakage of six transistor memory designs for the very demanding requirements of next generation cellular designs and other mobile products. As the proportion of SoC die area occupied by memory continues to grow these benefits translate to dramatic advantages for the whole SoC – and, consequently, for National's customers."
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys' patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at www.mosys.com.
Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or servicenames referenced in this release may be trademarks or registered trademarks of their respective holders.