Peter Clarke, EETimes
5/25/2016 09:55 AM EDT
LONDON—The 22FDX fully-depleted silicon-on-insulator (FDSOI) process developed by Globalfoundries Inc. (Santa Clara, Calif.) is on track to debut later this year and the company is working on the follow-on process, according to chief technology officer Gary Patton.
Globalfoundries claims its 22FDX platform, four processes with different optimizations, can deliver FinFET performance and energy efficiency at a cost comparable with planar 28nm CMOS. The ability to perform back-biasing provides the opportunity to dynamically change the operation of transistors from performance to minimal leakage.
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