Peter Clarke, May. 25, 2016 –
The 22FDX fully-depleted silicon-on-insulator (FDSOI) process developed by Globalfoundries Inc. (Santa Clara, Calif.) is on track to debut later this year and the company is working on the follow-on process, according to chief technology officer Gary Patton.
Globalfoundries claims its 22FDX platform, four processes with different optimizations, can deliver FinFET performance and energy efficiency at a cost comparable with planar 28nm CMOS. The ability to perform back-biasing provides the opportunity to dynamically change the operation of transistors from performance to minimal leakage.
However, FinFET production remains the mainstream option for leading edge ICs that is best supported by foundries, including Globalfoundries, and by IP developers. In addition Samsung's foundry is also offering a 28nm FDSOI process.
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