UMC to port MoSys' one-transistor SRAM cell to advanced logic processes

UMC to port MoSys' one-transistor SRAM cell to advanced logic processes
By Semiconductor Business News
September 24, 2001 (12:01 p.m. EST)
URL: http://www.eetimes.com/story/OEG20010924S0069

HSINCHU, Taiwan--Silicon foundry supplier United Microelectronics Corp. here and memory developer MoSys Inc. of Sunnyvale, Calif., today announced an extension to their cooperation in one-transistor SRAM technology for 0.15- and 0.13-micron logic-IC processes.

UMC said it will port MoSys' 1T-SRAM cell to next-generation logic processes after previously verifying the memory technology on its 0.18-micron processes.

The one-transistor SRAM cell is expected to be used in system-on-chip designs, which are primarily made up of logic blocks. The 1T-SRAM cell will double the bit density of embedded memory blocks compared to traditional SRAM designs, according to UMC and MoSys.

"The combination of UMC's advanced logic processes and MoSys' 1T-SRAM technology provides designers with a strong technology platform for their next generation of SoC products," stated Jean Tien, strategic marketing vice president of UMC.

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