ST opts for phase-change memory on 28nm FDSOI

May 11, 2017 // By Peter Clarke, eeNews

STMicroelectronics NV (Geneva, Switzerland) has opted to use phase-change memory as an embedded non-volatile memory option for its 28nm fully-depleted silicon-on-insulator (FDSOI) process.

Jean-Marc Chery, chief operating officer of ST, revealed the development during a presentation at ST's Capital Markets Day held in London, May 11.

ST offers an embedded flash memory option at 40nm and has been working on alternative embedded NVM at 28nm.

Phase-change memory exploits the behaviour of chalcogenide glass that is can be moved reversibly between amorphous and crystalline states with different electrical resisitance. Chery, who has been named as deputy CEO with effect from July 1, said in his presentation that ST is working on PCM-above-IC as its embedded NVM for 28nm. He also said the embedded PCM would meet the most stringent requirements of the automotive industry.

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