Attopsemi's I-fuse OTP worked at 0.4V and 1uW read at 22nm process for IoT application
Attopsemi's I-fuse OTP provides ultra-low read voltage/current, ultra-low program voltage/current, small size and wide temperature to enable 22nm process for a battery-less RFID tags in IoT applications
Hsinchu City, Taiwan - September 17, 2018 - Attopsemi Technology Co., LTD, a leading OTP solution provider, announced today that it recently had One-Time Programmable (OTP) IP working at 0.4V and 1uW read for a battery-less 61GHz RFID tags application. Attopsemi, a fuse-based OTP IP provider, has I-fuse™ IP across all CMOS processes from 0.7um to 22nm, 7nm, and beyond, including G, LP, ULP, mixed signal, high voltage, BCD processes, and FD-SOI, etc.
“We sincerely appreciate the supports from the foundry and customer in developing our proprietary ultra-low power I-fuse™ OTP technology for RFID tags,” said Shine Chung, Chairman of Attopsemi. “This project has proved that we have innovative circuit techniques other than the innovative I-fuse™ techniques. After years of dedicated work, our I-fuse™ technology has finally found an application to prove I-fuse™ can provide low power read other than low power program feature. By using a fraction of program current and cell area, we highly expect our I-fuse™ can bring more substantial benefits to the ultra-low power IoT applications.”
About Attopsemi Technology
Founded in 2010, Attopsemi Technology is dedicated to developing and licensing fuse-based One-Time Programmable (OTP) IP to all CMOS process technologies from 0.7um to 7nm and beyond with various silicided polysilicon and HKMG technologies. Attopsemi provides the best possible OTP solutions for all merits in small size, high quality, high reliability, low power, high speed, wide temperature and high data security. Attopsemi's proprietary I-fuse™ OTP technologies have been proven in numerous CMOS technologies and in several silicon foundries.
|
Attopsemi Technology Hot IP
1x64 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 22nmFDX 0.8V/1.8V Proc ...
32x8 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm Mixed-Signal 1.8V/3.3V Pr ...
512x8 Bits OTP (One-Time Programmable) IP, GLOBA-FOUNDR--- 0.13um BCD 1.5V/5V Pr ...
4Kx8 Bits OTP (One-Time Programmable) IP, TSM- 0.18µm 1.8V/5V Mixed-Signal Proc ...
Related News
- Attopsemi's I-fuse OTP worked at 0.4V and 1uW read on GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems' (IPMS) battery-less 61GHz RFID tags
- Attopsemi Expands its Proven I-fuse® OTP Portfolio on X-FAB's 180nm Platform
- Attopsemi's Revolutionary I-fuse® OTP Silicon-Proven on FinFET Technology
- Attopsemi's I-fuse OTP IP Embedded into NJR's Products
- Attopsemi's I-fuse OTP IP Qualified and Available on GLOBALFOUNDRIES 22FDX FD-SOI Platform
Breaking News
- Arteris Joins Intel Foundry Accelerator Ecosystem Alliance Program to Support Advanced Semiconductor Designs
- SkyeChip Joins Intel Foundry Accelerator IP Alliance
- Siemens and Intel Foundry advance their collaboration to enable cutting-edge integrated circuits and advanced packaging solutions for 2D and 3D IC
- Cadence Expands Design IP Portfolio Optimized for Intel 18A and Intel 18A-P Technologies, Advancing AI, HPC and Mobility Applications
- Synopsys and Intel Foundry Propel Angstrom-Scale Chip Designs on Intel 18A and Intel 18A-P Technologies
Most Popular
- QuickLogic Delivers eFPGA Hard IP for Intel 18A Based Test Chip
- Siemens collaborates with TSMC to drive further innovation in semiconductor design and integration
- Aion Silicon Joins Intel Foundry Accelerator Design Services Alliance to Deliver Next-Generation Custom SoCs at Scale
- TSMC Unveils Next-Generation A14 Process at North America Technology Symposium
- BOS Semiconductors to Partner with Intel to Accelerate Automotive AI Innovation
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |