By Dylan McGrath, EETimes
February 20, 2019
SAN FRANCISCO — Intel gave further details on its technique for embedding spin-transfer torque (STT)-MRAM into devices using its 22nm FinFET process, pronouncing the technology ready for high-volume manufacturing. Embedded MRAM is considered a promising technology for applications such as internet-of-things (IoT) devices.
In a paper presented at the International Solid State Circuits Conference here Tuesday, Intel said it has used a "write-verify-write" scheme and a two-stage current sensing technique to create 7Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process. The company had provided early details of its success in developing the first FinFET-based MRAM devices last year at the International Electron Devices Meeting.
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