MoSys Opens Office in Tokyo, Japan

New Office Expands Global Presence and Supports Continued Growth in Japanese Marketplace

SUNNYVALE, CALIF. – (February 3, 2003) – MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density embedded memory technology, today announced the opening of its first Japan office. Located in Tokyo, MoSys' new office will expand the company's global presence and add a point of contact for current customers and partners located in the region.

"To have a true global presence, companies must be able to provide local access and immediate availability to customers throughout the world," said Dr. Fu-Chieh Hsu, president, chairman and chief executive officer at MoSys. "We have already seen tremendous growth in our licensing business from Japan and want to further this and improve the support for our existing customers."

MoSys' Japanese office is located at Quoure Ebisu 302, 4-11-9 Ebisu, Shibuya-ku Tokyo, 150-0013, Japan. The phone number is +81-3-3441-2028, fax +81-3-3441-2029.

ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technology, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

Note for Editors:1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.

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